1SS367(TPH3,F) Toshiba

1SS367 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application Unit: mm z Small package z Low forward voltage: V = 0.23V (typ.) I = 5mA F F Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 15 V RM Reverse voltage V 10 V R Maximum (peak) forward current I 200 mA FM Average forward current I 100 mA O Surge current (10ms) I 1 A FSM Power dissipation P * 200 mW Junction temperature T 125 C j Storage temperature T 55~125 C stg Operating temperature range T 40~100 C opr JEDEC JEITA Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 1-1E1A temperature/current/voltage and the significant change in Weight: 0.004g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Mounted on a glass epoxy circuit board of 20 20 mm Pad dimension of 4 4 mm. Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1mA 0.18 F (1) F Forward voltage V I = 5mA 0.23 0.30 F (2) F V V I = 100mA 0.35 0.50 F (3) F Reverse current I V = 10V 20 A R R Total capacitance C V = 0, f = 1MHz 20 40 pF T R Equivalent Circuit (Top View) Marking 1 2007-11-01 1SS367 2 2007-11-01