SS5P3, SS5P4 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES eSMP Series Available Very low profile - typical height of 1.1 mm Ideal for automated placement K Low forward voltage drop, low power losses High efficiency 1 Low thermal resistance 2 Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C TO-277A (SMPC) AEC-Q101 qualified available -Automotive ordering code: base P/NHM3 Anode 1 K Material categorization: for definitions of compliance Cathode Anode 2 please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS For use in low voltage high frequency inverters, I 5.0 A F(AV) freewheeling, DC/DC converters, and polarity protection V 30 V, 40 V RRM applications. I 150 A FSM E 20 mJ AS MECHANICAL DATA V at I = 5.0 A 0.403 V F F Case: TO-277A (SMPC) T max. 150 C J Molding compound meets UL 94 V-0 flammability rating Package TO-277A (SMPC) Base P/N-M3 - halogen-free, RoHS-compliant, and Diode variations Single commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and automotive grade Base P/NHM3 X - halogen-free, RoHS-compliant, and automotive grade ( X denotes revision code e.g. A, B,.....) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SS5P3 SS5P4 UNIT Device marking code S53 S54 Maximum repetitive peak reverse voltage V 30 40 V RRM Maximum average forward rectified current (fig. 1) I 5.0 A F(AV) Peak forward surge current 10 ms single half sine-wave I 150 A FSM superimposed on rated load Non-repetitive avalanche energy at I = 2.0 A, T = 25 C E 20 mJ AS J AS Operating junction and storage temperature range T , T -55 to +150 C J STG Revision: 10-Dec-14 Document Number: 88982 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SS5P3, SS5P4 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 2.5 A 0.416 - F T = 25 C A I = 5.0 A 0.476 0.52 F Maximum instantaneous forward (1) V V F voltage I = 2.5 A 0.312 - F T = 125 C A I = 5.0 A 0.403 0.45 F T = 25 C 61.8 250 A A (2) Maximum reverse current Rated V I R R T = 125 C 26.7 40 mA A Typical junction capacitance 4.0 V, 1 MHz C 280 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise specified) A PARAMETER SYMBOL SS5P3 SS5P4 UNIT R (1) 60 JA Typical thermal resistance C/W R 3 JL Note (1) Units mounted on recommended PCB 1 oz. pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE SS5P4-M3/86A 0.10 86A 1500 7 diameter plastic tape and reel SS5P4-M3/87A 0.10 87A 6500 13 diameter plastic tape and reel (1) SS5P4HM3/86A 0.10 86A 1500 7 diameter plastic tape and reel (1) SS5P4HM3/87A 0.10 87A 6500 13 diameter plastic tape and reel (1) SS5P4HM3 A/H 0.10 H 1500 7 diameter plastic tape and reel (1) SS5P4HM3 A/I 0.10 I 6500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 10-Dec-14 Document Number: 88982 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000