333 3 SS8PH9, SS8PH10 www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount High Voltage Schottky Rectifier FEATURES eSMP Series Available Very low profile - typical height of 1.1 mm Ideal for automated placement K Guardring for overvoltage protection High barrier technology, T = 175 C maximum J 1 Low leakage current Meets MSL level 1, per J-STD-020, 2 LF maximum peak of 260 C AEC-Q101 qualified available SMPC (TO-277A) - Automotive ordering code: base P/NHM3 K Anode 1 Material categorization: for definitions of compliance Cathode Anode 2 please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS LINKS TO ADDITIONAL RESOURCES For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or 3D Models polarity protection application. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: SMPC (TO-277A) I 8.0 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 90 V, 100 V RRM Base P/N-M3 - halogen-free, RoHS-compliant, and I 150 A FSM commercial grade E 20 mJ Base P/NHM3 X - halogen-free, RoHS-compliant, and AS AEC-Q101 qualified V at I = 8.0 A 0.720 V F F ( X denotes revision code e.g. A, B, .....) I 0.18 A R Terminals: matte tin plated leads, solderable per T max. 175 C J J-STD-002 and JESD 22-B102 Package SMPC (TO-277A) M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix Circuit configuration Single meets JESD 201 class 2 whisker test MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SS8PH9 SS8PH10 UNIT Device marking code 8H9 8H10 Maximum repetitive peak reverse voltage V 90 100 V RRM Maximum average forward rectified current (fig. 1) I 8.0 A F(AV) Peak forward surge current 10 ms single half sine-wave I 150 A FSM superimposed on rated load Non-repetitive avalanche energy E 20 mJ AS at I = 2.0 A, T = 25 C AS J Operating junction and storage temperature range T , T -55 to +175 C J STG Revision: 24-Apr-2020 Document Number: 88989 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D SS8PH9, SS8PH10 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 4.0 A 0.769 - F T = 25 C A I = 8.0 A 0.850 0.90 F (1) Instantaneous forward voltage V V F I = 4.0 A 0.634 - F T = 125 C A I = 8.0 A 0.720 0.76 F T = 25 C 0.18 2.0 A (2) Reverse current Rated V I A R R T = 125 C 110 300 A Typical junction capacitance 4.0 V, 1 MHz C 140 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise specified) A PARAMETER SYMBOL SS8PH9 SS8PH10 UNIT (1) R 65 JA Typical thermal resistance C/W R 3 JL Note (1) Units mounted on recommended PCB 1 oz. pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE SS8PH10-M3/86A 0.10 86A 1500 7 diameter plastic tape and reel SS8PH10-M3/87A 0.10 87A 6500 13 diameter plastic tape and reel (1) SS8PH10HM3 A/H 0.10 H 1500 7 diameter plastic tape and reel (1) SS8PH10HM3 A/I 0.10 I 6500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 24-Apr-2020 Document Number: 88989 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000