1SS357(TPH3,F) Toshiba

1SS357 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS357 Low Voltage High Speed Switching Unit: mm z Low forward voltage : V = 0.54V (typ.) F (3) z Low reverse current : I = 5A (max) R z Small package : SC-70 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 45 V RM Reverse voltage V 40 V R Maximum (peak) forward current I 300 mA FM Average forward current I 100 mA O Surge current (10ms) I 1 A FSM Power dissipation P 200* mW Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high JEITA temperature/current/voltage and the significant change in TOSHIBA 1-1E1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating Weight: 0.004g (typ.) temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm. Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1mA 0.28 F (1) F Forward voltage V I = 10mA 0.36 F (2) F V V I = 100mA 0.54 0.60 F (3) F Reverse current I V = 40V 5 A R (1) R Total capacitance C V = 0, f = 1MH 18 25 pF T R z Pin Assignment (Top View) Marking Start of commercial production 1990-01 1 2014-03-01 1SS357 2 2014-03-01