EFM102 Rectron

EFM101 THRU EFM107 SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere FEATURES * Glass passivated device *Ideal for surface mounted applications * Low leakage current * Metallurgically bonded construction * P/N suffix V means AEC-Q101 qualified DO-214AC * P/N suffix V means Halogen-free MECHANICAL DATA 0.067 (1.70 ) 0.110 ( 2.79 ) 0.051 (1.29 ) 0.086 ( 2.18 ) * Epoxy : Device has UL flammability classification 94V-0 *Mounting position: Any 0.180 ( 4.57 ) *Weight: 0.057 gram 0.160 ( 4.06 ) 0.012 ( 0.305 ) 0.006 ( 0.152 ) 0.091 ( 2.31 ) 0.067 ( 1.70 ) 0.059 ( 1.50 ) 0.008 ( 0.203 ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.035 ( 0.89 ) 0.004 ( 0.102 ) o Ratings at 25 C ambient temperature unless otherwise specified. 0.209 ( 5.31 ) Resistive or inductive load. 0.185 ( 4.70 ) Dimensions in inches and (millimeters) O MAXIMUM RATINGS ( TA=25 C unless otherwise noted) RATINGS SYMBOL EFM101 EFM102 EFM103 EFM104 EFM105 EFM106 EFM107 UNITS Maximum Recurrent Peak Reverse Voltage 150 V 50 100 200 300 400 600 Volts RRM Maximum RMS Voltage V 35 70 105 140 210 280 420 Volts RMS 50 100 150 200 300 400 600 Maximum DC Blocking Voltage V Volts DC Maximum Average Forward Rectified Current I 1.0 Amps o O at T = 55 C A Peak Forward Surge Current 8.3 ms single half sine-wave I 30 Amps FSM superimposed on rated load (JEDEC method) 2 Typical Current Square Time 2 3.7 A S I T R 85 Q JA 0 C/W Typical Thermal Resistance (Note 4) R Q JL 35 Typical Junction Capacitance (Note 2) C 10 pF J 0 Operating and Storage Temperature Range T , T -55 to + 150 C J STG O ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted) CHARACTERISTICS SYMBOL UNITS EFM101 EFM102 EFM103 EFM104 EFM105 EFM106 EFM107 Maximum Instantaneous Forward Voltage at 1.0A DC V 0.95 1.25 1.50 Volts F o T = 25 C 5.0 M Amps Maximum DC Reverse Current A IR o at Rated DC Blocking Voltage T = 150 C mAmps 2.0 A Maximum Reverse Recovery Time (Note 1) trr 35 50 nSec 2018-01 NOTES : 1. Reverse Recovery Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A REV:C 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts 3. Fully ROHS compliant, 100% Sn plating (Pb-free). 4. Thermal Resistance : Mounted on PCB.RATING AND CHARACTERISTICS CURVES ( EFM101 THRU EFM107 ) trr +0.5A 50 10 NONINDUCTIVE NONINDUCTIVE (-) D.U.T 0 (+) PULSE 25 Vdc GENERATOR (approx) (NOTE 2) -0.25A (-) 1 (+) OSCILLOSCOPE NON- (NOTE 1) INDUCTIVE NOTES: 1 Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF. -1.0A 2. Rise Time = 10ns max. Source Impedance = 1cm 50 ohms. SET TIME BASE FOR 10/1 ns/cm FIG.1 TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACCTERRISTIC 1.25 10000 M O 1.00 T =150 C A 1000 0.75 10 0.50 1.0 Single Phase O 0.25 T =25 C Half Wave 60Hz A Resistive or Inductive Load 0 0.1 0 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 O AMBIENT TEMPERATURE, ( C) PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) FIG.2 TYPICAL FORWARRD CURRENT FIG.3 MAXIMUM REVERRSE DERATING CURVE CHARRACTERISTICS AVERAGE FORWARD CURRENT, (A) INSTANTANEOUS REVERSE CURRENT, ( A)