SMD Switching Diode CDST-116-G RoHS Device Features SOT-23 - Low leakage current applications. 0.118(3.00) 0.110(2.80) - Medium speed switching times. 3 0.055(1.40) 0.047(1.20) 1 2 0.079(2.00) 0.071(1.80) Mechanical data 0.006(0.15) 0.003(0.08) - Case: SOT-23, molded plastic. 0.004(0.10) 0.100(2.55) 0.000(0.00) 0.089(2.25) - Terminals: Solderable per MIL-STD-750, 0.041(1.05) method 2026. 0.035(0.90) 0.020(0.50) 0.020(0.50) 0.012(0.30) 0.012(0.30) Circuit Diagram Dimensions in inches and (millimeter) 3 2 1 Maximum Ratings (at Ta=25C unless otherwise noted) Symbol Parameter Value Unit Peak repetitive peak reverse voltage VRRM t V Working peak reverse voltage VRWM 75 V DC blocking voltage VR Forward continuous current IFM 200 mA Non-repetitive peak forward surge current t=8.3ms IFSM 2 A Power dissipation PD 225 mW Junction temperature TJ 150 C Storage temperature range TSTG -55 to +150 C Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-B0029 Page 1 Comchip Technology CO., LTD.SMD Switching Diode Electrical Characteristics (at Ta=25C unless otherwise noted) Typ Parameter Conditions Symbol Min Max Unit Reverse breakdown voltage IR=100 A V(BR) 75 V V V 0.9 IF=1mA VF1 V IF=10mA VF2 1 V Forward voltage IF=50mA VF3 1.1 V IF=150mA VF4 1.25 V Reverse current VR=75V IR 5 nA Capacitance between terminals VR=0V, f=1MHz pF CT 2 s Reverse recovery time IF=IR=10mA, Irr=0.1IR, RL=100 trr 3 Typical Rating and Characteristic Curves (CDST-116-G) Fig.1 - Forward Characteristics Fig.2 - Reverse Characteristics 200 0.8 100 Ta=100C 0.6 Ta=100C Ta=25C Ta=25C 10 0.4 1 0.2 0.4 0.6 0.8 1.0 1.2 0 15 30 45 60 75 Forward Voltage, VF (V) Reverse Voltage, VR (V) Fig.3 - Capacitance Characteristics Fig.4 - Power Derating Curve 2.5 300 Ta=25C f=1MHz 2.0 225 1.5 150 1.0 75 0.5 0.0 0 0 5 10 15 20 0 25 50 75 100 125 150 Reverse Voltage, VR (V) Ambient Temperature, Ta (C) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-B0029 Page 2 Comchip Technology CO., LTD. Capacitance Between Terminals, CT (pF) Forward Current, IF (mA) Power Dissipation, PD (mW) Reverse Current, IR (nA)