FFM101 THRU FFM107 SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES * Glass passivated device * Ideal for surface mounted applications * Low leakage current * Metallurgically bonded construction * Mounting position: Any * Weight: 0.057 gram * P/N suffix V means AEC-Q101 qualified, e.g:FFM101V * P/N suffix V means Halogen-free 0.067 (1.70) ( ) 0.110 2.79 0.051 (1.29) ( ) 0.086 2.18 MECHANICAL DATA * Epoxy : Device has UL flammability classification 94V-0 ( ) 0.180 4.57 ( ) 0.160 4.06 0.012 (0.305) 0.006 (0.152) 0.091 (2.31) ( ) 0.067 1.70 ( ) 0.059 1.50 ( ) 0.008 0.203 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.035 (0.89) ( ) 0.004 0.102 o Ratings at 25 C ambient temperature unless otherwise specified. ( ) 0.209 5.31 Single phase, half wave, 60 Hz, resistive or inductive load. 0.185 (4.70) For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) o MAXIMUM RATINGS (At TA = 25 C unless otherwise noted) SYMBOL FFM101 FFM102 FFM103 FFM104 FFM105 FFM106 FFM107 UNITS RATINGS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts o Maximum Average Forward Rectified Current at TA = 55 C IO 1.0 Amps Peak Forward Surge Current 8.3 ms single half sine-wave IFSM 30 Amps superimposed on rated load (JEDEC method) 2 3.74 2 I T Typical Current Squared Time A S 0 (Note 2) R Q JL 30 C/W Maximum Thermal Resistance 0 (Note 3) RQ JA 70 C/W 15 pF Typical Junction Capacitance (Note 1) CJ 0 TJ, TSTG -55 to + 150 C Operating and Storage Temperature Range o ELECTRICAL CHARACTERISTICS (At TA = 25 C unless otherwise noted) CHARACTERISTICS SYMBOL FFM101 FFM102 FFM103 FFM104 FFM105 FFM106 FFM107 UNITS Maximum Forward Voltage at 1.0A DC 1.3 Volts VF o Maximum Full Load Reverse Current,Full cycle Average at TA = 25 C 50 uAmps o Maximum DC Reverse Current at IR TA = 25 C 5.0 uAmps o Rated DC Blocking Voltage TA = 150 C 2.0 mAmps trr 150 250 500 nSec Maximum Reverse Recovery Time (Note 4) NOTES : 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC 2019-01 2 2. Thermal resistance junction to terminal 6.0mm copper pads to each terminal. REV: D 2 3. Thermal resistance junction to ambient, 6.0mm copper pads to each terminal. 4. Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A( ) RATING AND CHARACTERISTIC CURVES FFM101 THRU FFM107 FIG. 1 - TYPICAL FORWARD CURRENT FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD DERATING CURVE SURGE CURRENT 50 1.0 .8 40 .6 30 20 .4 Single Phase Half Wave 60Hz .2 10 Resistive or 8.3ms Single Half Sine-Wave Inductive Load (JEDED Method) 0 0 124 6 8 10 20 40 60 80100 0 25 50 75 100 125 150 175 NUMBER OF CYCLES AT 60Hz AMBIENT TEMPERATURE, ( ) FIG. 3 - MAXIMUM REVERSE CHARACTERISTICS FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 20 T = 25 J 10 Pulse Width = 300us O T =150 C 1% Duty Cycle A 1.0 O T =25 C A .1 522%.4 ).34 .4 .%/53 2%6%23% .01 1.0 1.2 1.4 1.6 1.8 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 5 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY FIG. 6 - MAXIMUM JUNCTION CAPACITANCE TIME CHARACTERISTIC 200 50 10 100 NONINDUCTIVE NONINDUCTIVE trr 60 +0.5A 40 ( - ) D.U.T ( + ) 20 0 PULSE 25 Vdc GENERATOR (approx) -0.25A 10 (NOTE 2) T = 25 J ( - ) 1 6 OSCILLOSCOPE ( + ) NON- (NOTE 1) 4 INDUCTIVE 2 -1.0A NOTES:1 Rise Time = 7ns max. Input Impedance = 1cm SET TIME BASE FOR 1 megohm. 22 pF. 1 50/1 ns/cm 2. Rise Time = 10ns max. Source Impedance = .1 .2 .4 1.0 2 4 10 20 40 100 50 ohms. REVERSE VOLTAGE, ( V ) AVERAGE FORWARD CURRENT, (A) ( ) JUNCTION CAPACITANCE, pF INSTANTANEOUS FORWARD CURRENT, (A) FORWARD SURGE CURRENT, (A)