VS-1N3208 Series www.vishay.com Vishay Semiconductors Silicon Rectifier Diodes, (Stud Version) 15 A FEATURES Low thermal impedance High case temperature Excellent reliability Maximum design flexibility Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DO-5 (DO-203AB) PRIMARY CHARACTERISTICS I 15 A F(AV) Package DO-5 (DO-203AB) Circuit configuration Single MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS (1) 15 A I F(AV) (1) T 150 C C 50 Hz 239 I A FSM (1) 60 Hz 250 50 Hz 286 2 2 I t A s 60 Hz 260 2 2 I t 3870 A s V Range 50 to 600 V RRM T -65 to +175 C J Note (1) JEDEC registered values ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V , MAXIMUM DIRECT REVERSE VOLTAGE RRM RM TYPE NUMBER (T = -65 C TO 175 C) (T = -65 C TO 175 C) J J V V (1) (1) VS-1N3208 50 50 (1) (1) VS-1N3209 100 100 (1) (1) VS-1N3210 200 200 (1) (1) VS-1N3211 300 300 (1) (1) VS-1N3212 400 400 (1) (1) VS-1N3213 500 500 (1) (1) VS-1N3214 600 600 Notes Basic type number indicates cathode to case. For anode to case, add R to part number, e.g. 1N3208R, 1N3209R (1) JEDEC registered values Revision: 11-Jan-18 Document Number: 93496 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-1N3208 Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS (1) 15 A Maximum average forward current I 180 sinusoidal conduction F(AV) (1) at case temperature 150 C Half cycle 50 Hz sine wave 239 Following any rated load or 6 ms rectangular pulse condition and with rated Half cycle 60 Hz sine wave V applied RRM (1) 250 or 5 ms rectangular pulse Maximum peak one cycle I A FSM non-repetitive surge current Half cycle 50 Hz sine wave 284 Following any rated load or 6 ms rectangular pulse condition and with V RRM Half cycle 60 Hz sine wave applied following surge = 0 297 or 5 ms rectangular pulse With rated V applied t = 10 ms 286 RRM 2 Maximum I t for fusing following surge, t = 8.3 ms 260 initial T = 150 C 2 J 2 I t A s 2 t = 10 ms 403 Maximum I t for individual With V = 0 following RRM device fusing surge, initial T = 150 C t = 8.3 ms J 368 2 Maximum I t for individual 2 (2) 2 I t t = 0.1 ms to 10 ms, V = 0 following surge 3870 A s RRM device fusing (1) Maximum forward voltage drop V I = 15 A (47.1 A peak), T = 150 C 1.5 V FM F(AV) C (1) Maximum average reverse current I Maximum rated I and T = 150 C 10 mA R(AV) F(AV) C Notes (1) JEDEC registered values (2) 2 2 I t for time t = I t x t x x THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating (1) T , T -65 to 175 C J Stg and storage temperature range Maximum internal thermal R DC operation 0.65 thJC resistance, junction to case C/W Thermal resistance, R Mounting surface, smooth, flat and greased 0.25 thCS case to sink (2) Not lubricated thread, tighting on nut 3.4 (30) (2) Lubricated thread, tighting on nut 2.3 (20) Maximum allowable mounting torque (+0 %, -10 %) (3) Not lubricated thread, tighting on hexagon 4.2 (37) (3) Lubricated thread, tighting on hexagon 3.2 (28) 28.5 g Weight 1oz. Case style JEDEC DO-5 (DO-203AB) Notes (1) JEDEC registered values (2) Recommended for pass-through holes (3) Recommended for holed threaded heatsinks Revision: 11-Jan-18 Document Number: 93496 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000