1SS301(TE85L,F) Toshiba

1SS301 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Applications Unit: mm AEC-Q101 Qualified (Note1) Small package : SC-70 Low forward voltage : VF (3) = 0.90 V (typ.) Fast reverse recovery time : trr = 1.6 ns (typ.) Small total capacitance : CT = 0.9 pF (typ.) Note1: For detail information, please contact to our sales. Absolute Maximum Ratings C (Ta = 25 ) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 85 V RM Reverse voltage V 80 V R Maximum (peak) forward current I 300* mA FM JEDEC Average forward current I 100* mA O JEITA SC-70 Surge current (10 ms) I 2* A FSM TOSHIBA 1-2P1B Power dissipation P 100 mW Junction temperature 125 C Tj Weight: 0.006 g (typ.) Storage temperature T -55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total rating = unit rating 1.5 Start of commercial production 1986-11 1 2017-09-22 1SS301 Electrical Characteristics C (Ta = 25 ) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1 mA 0.60 F (1) F V I = 10 mA 0.72 Forward voltage F (2) F V V I = 100 mA 0.90 1.20 F (3) F I V = 30 V 0.1 R (1) R Reverse current A I V = 80 V 0.5 R (2) R Total capacitance C V = 0V, f = 1 MHz 0.9 3.0 pF T R Reverse recovery time t I = 10 mA (Fig.1) 1.6 4.0 ns rr F Marking Fig.1 Reverse Recovery Time (trr) Test Circuit 2 2017-09-22