1SS307(TE85L.F) Toshiba

1SS307 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS307 General Puropose Rectifier Applications Unit: mm Low forward voltage : V = 1.0V (typ.) F Low reverse current : I = 10nA (max) R Small total capacitance : C = 3.0pF (typ.) T Small package : SC59 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 35 V RM Reverse voltage V 30 V R Maximum (peak) forward current I 300 mA FM Average forward current I 100 mA O Surge current (10ms) I 1 A FSM Power dissipation P 150 mW Junction temperature T 125 C j JEDEC TO236MOD Storage temperature T 55 to 125 C JEITA SC59 stg TOSHIBA 2-3F1S Note: Using continuously under heavy loads (e.g. the application of high Weight: 12 mg (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage V I = 100mA 1.0 1.3 V F F Reverse current I V = 30V 10 nA R R Total capacitance C V = 0V, f = 1MHz 3.0 6.0 T R pF Marking Start of commercial production 1988-05 1 2017-10-30 1SS307 2 2017-10-30