1SS308(TE85L,F Toshiba

1SS308 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS308 Unit: mm Ultra High Speed Switching Applications Small package : SC-74A Low forward voltage : V = 0.92 V (typ.) F (3) Fast reverse recovery time : t = 1.6 ns (typ.) rr Small total capacitance : C = 2.2 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 85 V RM Reverse voltage V 80 V R Maximum (peak) forward current I 300 (*) mA FM Average forward current I 100 (*) mA O Surge current (10ms) I 2 (*) A FSM P (Note 1, 3) 300 D Power dissipation mW P (Note 2) 200 D T (Note 1) 150 j JEDEC Junction temperature C T (Note 2) 125 j JEITA SC74A T (Note 1) 55 to 150 stg TOSHIBA 1 3H1A Storage temperature C T (Note 2) 55 to 125 stg Weight: 0.014g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: For devices with the ordering part number ending in LF(T. Note 2: For devices with the ordering part number in other than LF(T. Note 3: Total rating. (*) Unit rating. Total rating = unit rating 1.5 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1 mA 0.61 F (1) F Forward voltage V I = 10 mA 0.74 F (2) F V V I = 100 mA 0.92 1.20 F (3) F I V = 30 V 0.1 R (1) R Reverse current A I V = 80 V 0.5 R (2) R Total capacitance C V = 0 V, f = 1 MHz 2.2 4.0 pF T R Reverse recovery time t I = 10 mA, Fig.1 1.6 4.0 rr F ns Start of commercial production 1987-07 2020-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation 1SS308 Marking Fig.1 Reverse recovery time (t ) test circuit rr 2020-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation