1SS314,H3F Toshiba

1SS314 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS314 VHF Tuner Band Switch Applications Unit: mm Small package. Small total capacitance: C = 1.2 pF (max) T Low series resistance: r = 0.5 (typ.) s Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Reverse voltage V 30 V R Forward current I 100 mA F Junction temperature T 125 C j Storage temperature range T 55~125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEDEC operating temperature/current/voltage, etc.) are within the JEITA absolute maximum ratings. Please design the appropriate reliability upon reviewing the TOSHIBA 1-1E1A Toshiba Semiconductor Reliability Handbook (Handling Weight: 0.004 g (typ.) Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Forward voltage V I = 2 mA 0.85 V F F Reverse current I V = 15 V 0.1 A R R Reverse voltage V I = 1 A 30 V R R Total capacitance C V = 6 V, f = 1 MHz 0.7 1.2 pF T R Series resistance r I = 2 mA, f = 100 MHz 0.5 0.9 s F Marking Start of commercial production 1987-05 1 2014-03-01 1SS314 2 2014-03-01