1SS307(TE85L,F) Toshiba

1SS307 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS307 Unit: mm General Puropose Rectifier Applications Low forward voltage : V = 1.0 V (typ.) F Low reverse current : I = 10 nA (max) R Small total capacitance : C = 3.0 pF (typ.) T Small package : SC59 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 35 V RM Reverse voltage V 30 V R Maximum (peak) forward current I 300 mA FM Average forward current I 100 mA O Surge current (10 ms) I 1 A FSM P (Note 1, 3) 200 D Power dissipation mW P (Note 2) 150 D JEDEC TO236MOD (Note 1) 150 Tj Junction temperature C JEITA SC59 T (Note 2) 125 j TOSHIBA 2-3F1S T (Note 1) 55 to 150 stg Storage temperature range C Weight: 12 mg (typ.) T (Note 2) 55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: For devices with the ordering part number ending in LF(T. Note 2: For devices with the ordering part number in other than LF(T. 2 Note 3: Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.8 mm 3) Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage V I = 100 mA 1.0 1.3 V F F Reverse current I V = 30 V 10 R R nA Total capacitance C V = 0 V, f = 1 MHz 3.0 6.0 T R pF Marking Start of commercial production 1988-05 2017-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation 1SS307 Characteristics Curves P - T (Note) D a 300 (Note) D Mounted on an FR4 board (25.4 mm 25.4 mm 1.6 mm, 2 250 Cu pad: 0.8 mm 3) 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE T () a Note: Reference only with T of 125 . j Note: Reference only with T of 150 . j The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 2017-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation D POWER DISSIPATION P (mW) D