1SS294S,LF Toshiba

1SS294 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching z Low forward voltage : V = 0.54V (typ.) F (3) z Low reverse surrent : I = 5A (max) R z Small package : SC59 Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 45 V RM Reverse voltage V 40 V R Maximum (peak) forward current I 300 mA FM Average forward current I 100 mA O Power dissipation P 150 mW JEDEC TO236MOD Junction temperature T 125 C j JEITA SC59 Storage temperature range T 55~125 C stg TOSHIBA 13G1B Weight: 0.012g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25 C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1mA 0.28 F (1) F Forward voltage V V I = 10mA 0.36 F (2) F V I = 100mA 0.54 0.60 F (3) F Reverse current I V = 40V 5 A R R Total capacitance C V = 0, f = 1MHz 18 25 pF T R Marking 1 2007-11-01 1SS294 2 2007-11-01