STTH50W03CW STMicroelectronics

STTH50W03C Turbo 2 ultrafast high voltage rectifier Datasheet production data Description The STTH50W03C uses ST Turbo 2 300 V A1 technology. It is especially suited to be used for K DC/DC and DC/AC converters in the secondary A2 stage of MIG/MMA/TIG welding machines. Housed in ST s TO-247, this device offers high power integration for all welding machines and industrial applications. Table 1. Device summary Symbol Value A2 I 2 x 25 A F(AV) K A1 V 300 V RRM TO-247 t (typ) 20 ns rr STTH50W03CW T 175 C j V (typ) 1 V F Features Ultrafast switching Low reverse recovery current Low thermal resistance Reduces switching losses ECOPACK 2 compliant component August 2013 DocID024734 Rev1 1/9 This is information on a product in full production. www.st.comCharacteristics STTH50W03C 1 Characteristics Table 2. Absolute ratings (limiting values per diode, at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 300 V RRM I Forward rms current 40 A F(RMS) T = 105 C Per diode 25 c I Average forward current, = 0.5 A F(AV) T = 100C Per device 50 c I Surge non repetitive forward current t = 10 ms sinusoidal 200 A FSM p T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature + 175 C j Table 3. Thermal resistance Symbol Parameter Value Unit Per diode 1.8 R Junction to case th(j-c) Total 1 C / W R Coupling 0.2 th(c) When diodes 1 and 2 are used simultaneously: Tj = P x R (Per diode) + P x R (diode 1) (diode 1) th(j-c) (diode 2) th(c) Table 4. Static electrical characteristics per diode Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 15 j Reverse leakage (1) I V = V A R R RRM current T = 125 C 15 150 j T = 25 C 1.5 j I = 25 A F T = 150 C 1.0 1.2 j (2) V Forward voltage drop V F T = 25 C 1.8 j I = 50 A F T = 150 C 1.25 1.5 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.9 x I + 0.012 I F(AV) F (RMS) 2/9 DocID024734 Rev1