STTH4R02UY STMicroelectronics

STTH4R02-Y Automotive ultrafast recovery diode Datasheet - production data Description A K This device uses ST s new 200 V planar Pt doping technology, and it is especially suited for A A switching mode base drive and transistor circuits. Packaged in SMB, SMC and DPAK, it is intended K K for use in low voltage, high frequency inverters, SMB SMC freewheeling and polarity protection in K automotive applications. Table 1: Device summary NC A Symbol Value DPAK I 4 A F(AV) VRRM 200 V T (max.) 175 C j Features VF (typ.) 0.76 V Very low conduction losses Negligible switching losses t (typ.) 16 ns rr Low forward and reverse recovery times High junction temperature PPAP capable AEC-Q101 qualified April 2016 DocID17391 Rev 2 1/14 www.st.com This is information on a product in full production. Characteristics STTH4R02-Y 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage Tj = -40 C to + 175 C 200 V I Forward rms current 10 A F(RMS) DPAK Tc = 160 C Average forward current I 4 A F(AV) = 0.5, square wave SMB, SMC T = 95 C lead Surge non repetitive I t = 10 ms sinusoidal 70 A FSM p forward current T Storage temperature range -65 to +175 C stg (1) Maximum operating junction temperature Tj -40 to +175 C Notes: (1) (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 3: Thermal parameters Symbol Parameter Maximum Unit Rth(j-c) Junction to case DPAK 3.5 C/W R Junction to lead SMB, SMC 20 th(j-l) Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 3 j (1) IR Reverse leakage current VR = VRRM A Tj = 125 C - 2 20 T = 25 C - 0.95 1.05 j (2) VF Forward voltage drop IF = 4 A V Tj = 150 C - 0.76 0.83 Notes: (1) Pulse test: t = 5 ms, < 2% p (2) Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.67 x IF(AV) + 0.04 IF (RMS) 2/14 DocID17391 Rev 2