STTH5R06G-TR STMicroelectronics

STTH5R06 Turbo 2 ultrafast high voltage rectifier Datasheet - production data K A Description The device is developed using ST s Turbo 2 K 600 V technology. It is well-suited as a boost diode, especially for use in continuous mode power factor corrections and hard switching conditions. A This device is also intended for use as a free A K wheeling diode in power supplies and other power switching applications. TO-220AC K TO-220FPAC Table 1: Device summary K Symbol Value IF(AV) 5 A VRRM 600 V A DPAK Tj (max.) 175 C NC V (typ.) 1.40 V F trr (max.) 25 ns K K A A NC NC DPAK Features Ultrafast switching Low reverse recovery current Reduces switching losses Low thermal resistance Insulated package: TO-220FPAC Insulation voltage: 2000 V sine RMS ECOPACK 2 compliant component for DPAK on demand October 2016 DocID7976 Rev 12 1/17 www.st.com This is information on a product in full production. Characteristics STTH5R06 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V TO-220AC TO-220FPAC 20 IF(RMS) Forward rms current A DPAK DPAK 10 TO-220AC TC = 135 C DPAK Average forward current IF(AV) 5 A DPAK = 0.5, square wave TC = 105 C TO-220FPAC Surge non repetitive forward IFSM tp = 10 ms sinusoidal 50 A current Tstg Storage temperature range -65 to +175 C T Maximum operating junction temperature 175 C j Table 3: Thermal parameter Symbol Parameter Max. value Unit TO-220AC / DPAK / DPAK 3.0 Junction to case Rth(j-c) C/W TO-220FPAC 5.5 Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 C - 20 (1) IR Reverse leakage current VR = VRRM A T = 125 C - 25 250 j Tj = 25 C - 2.9 (2) VF Forward voltage drop IF = 5 A V T = 125 C - 1.4 1.8 j Notes: (1) Pulse test: tp = 5 ms, < 2% (2) Pulse test: tp = 380 s, < 2% To evaluate the conduction losses, use the following equation: 2 P = 1.164 x I + 0.128 x I F(AV) F (RMS) 2/17 DocID7976 Rev 12