STTH4R02 Ultrafast recovery diode Datasheet production data Description The STTH4R02 uses ST s new 200 V planar Pt . doping technology, and it is specially suited for switching mode base drive and transistor circuits. Packaged in DPAK, SMB and SMC, this device is intended for use in low voltage, high frequency 60% 60& inverters, freewheeling and polarity protection. Table 1. Device summary Symbol Value I 4 A F(AV) 1& 1& V 200 V RRM . 3 V (typ) 0.76 V F T (max) 175 C j t (typ) 16 ns rr Features Negligible switching losses High junction temperature Very low conduction losses Low forward and reverse recovery times ECOPACK 2 compliant component for DPAK on demand November 2016 DocID12360 Rev 6 1/14 This is information on a product in full production. www.st.com 14Characteristics STTH4R02 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 200 V RRM DPAK 10 I Forward rms current A F(RMS) SMB / SMC 70 DPAK T = 160 C c Average forward current, I 4A F(AV) = 0.5, square wave SMB / SMC T = 95 C L t = 10 ms sinusoidal I Surge non repetitive forward current 70 A p FSM T Storage temperature range -65 to +175 C stg T Maximum operating junction temperature 175 C j Table 3. Thermal parameters Symbol Parameter Max. value Unit R Junction to case DPAK 3.5 th(j-c) C/W R Junction to lead SMB / SMC 20 th(j-l) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C -3 j (1) I Reverse leakage current V = V A R R RRM T = 125 C - 2 20 j I = 12 A - 1.15 1.25 F T = 25 C j (2) V Forward voltage drop -0.95 1.05 V F I = 4 A F T = 150 C - 0.76 0.83 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.67 x I + 0.04 x I F(AV) F (RMS) 2/14 DocID12360 Rev 6