STTH6012W STMicroelectronics

STTH6012 Ultrafast recovery - 1200 V diode Main product characteristics I 60 A F(AV) V 1200 V RRM A K T 175 C j V (typ) 1.30 V F t (typ) 50 ns rr Features and benefits Ultrafast, soft recovery A Very low conduction and switching losses K High frequency and/or high pulsed current operation DO-247 STTH6012W High reverse voltage capability High junction temperature Description The high quality design of this diode has Order codes produced a device with low leakage current, regularly reproducible characteristics and intrinsic Part Number Marking ruggedness. These characteristics make it ideal for heavy duty applications that demand long term STTH6012W STTH6012W reliability. Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. March 2006 Rev 1 1/8 www.st.com 8Characteristics STTH6012 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1200 V RRM I RMS forward current 80 A F(RMS) I Average forward current, = 0.5 T = 90 C 60 A F(AV) c I Repetitive peak forward current t = 5 s, F = 5 kHz square 500 A FRM p I Surge non repetitive forward current t = 10 ms Sinusoidal 400 A FSM p T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j Table 2. Thermal parameter Symbol Parameter Value Unit R Junction to case 0.6 C/W th(j-c) Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 30 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 30 300 j T = 25 C 2.25 j (2) V Forward voltage drop T = 125 C I = 60 A 1.35 2.05 V F j F T = 150 C 1.30 1.95 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the conduction losses use the following equation: 2 P = 1.50 x I + 0.0075 I F(AV) F (RMS) 2/8