STTH200L04TV1 STMicroelectronics

STTH200L04TV1 Ultrafast high voltage rectifier Features Ultrafast switching A1 K1 Low reverse current Low thermal resistance A2 K2 Reduces switching and conduction losses K1 Package insulation voltage: 2500 V RMS A1 Description K2 The STTH200L04TV1 uses ST 400 V technology and is specially suited for use in switching power A2 supplies, welding equipment, and industrial applications, as an output rectification diode. ISOTOP STTH200L04TV1 Table 1. Device summary Symbol Value I up to 2 x 120 A F(AV) V 400 V RRM T (max) 150 C j V (typ) 0.83 V F t (max) 50 ns rr September 2011 Doc ID 12827 Rev 2 1/8 www.st.com 8Characteristics STTH200L04TV1 1 Characteristics Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 400 V RRM I Forward rms current 200 A F(RMS) T = 90 C = 0.5 Per diode 100 c I Average forward current A F(AV) T = 73 C = 0.5 Per diode 120 c Surge non repetitive forward I t = 10 ms sinusoidal 900 A FSM p current T Storage temperature range -55 to + 150 C stg T Maximum operating junction temperature 150 C j Table 3. Thermal resistance Value Symbol Parameter Unit (max). Per diode 0.50 R Junction to case th(j-c) Total 0.30 C/W R Coupling 0.10 th(c) When diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x R (Per diode) + P(diode 2) x R th(j-c) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 100 j Reverse leakage (1) I V = V A R R RRM current T = 125 C 100 1000 j T = 25 C 1.2 j (2) V Forward voltage drop I = 100 A V F F T = 150 C 0.83 1.0 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.8 x I + 0.002 I F(AV) F (RMS) 2/8 Doc ID 12827 Rev 2