STTH200F04TV1 STMicroelectronics

STTH200F04 Ultrafast high voltage rectifier Datasheet - production data Description A1 K1 This device, which uses ST 400 V technology, is A2 K2 especially suited for use in switching welding equipment. A2 Table 1: Device summary Symbol Value K2 I 2 x 100 A F(AV) A1 VRRM 400 V K1 T (max.) 150 C j ISOTOP VF (typ.) 0.95 V t (max.) 70 ns rr Features Ultrafast switching TM: ISOTOP is a trademark of Low reverse current STMicroelectronics Low thermal resistance Reduces switching and conduction losses Insulated package ISOTOP: Insulated voltage: 2500 VRMS sine Capacitance: 45 pF ECOPACK 2 compliant component December 2017 DocID031309 Rev 1 1/10 www.st.com This is information on a product in full production. Characteristics STTH200F04 1 Characteristics Table 2: Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 400 V I Forward rms current 200 A F(RMS) I Average forward current, = 0.5 TC = 60 C, per diode 100 A F(AV) I Surge non repetitive forward current tp = 10 ms sinusoidal 1000 A FSM T Storage temperature range -55 to +150 C stg Tj Maximum operating junction temperature 150 C Table 3: Thermal parameters Maximum Symbol Parameter Unit values Per diode 0.60 Junction to case Rth(j-c) Total 0.35 C/W Coupling Rth(c) 0.1 When the diodes 1 and 2 are used simultaneously: Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) Table 4: Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 75 j (1) IR Reverse leakage current V = V A R RRM Tj = 125 C - 75 750 T = 25 C - 1.45 j Tj = 125 C IF = 100 A 0.95 1.20 (2) V Forward voltage drop T = 150 C - 0.90 1.15 V F j Tj = 125 C - 1.20 1.50 IF = 200 A T = 150 C - 1.15 1.45 j Notes: (1) Pulse test: tp = 5 ms, < 2% (2) Pulse test: t = 380 s, < 2% p To evaluate the maximum conduction losses, use the following equation: 2 P = 0.85 x I + 0.003 x I F(AV) F (RMS) 2/10 DocID031309 Rev 1