STTH2R06RL STMicroelectronics

STTH2R06 High efficiency ultrafast diode Features A K Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature Description DO-41 SMA The STTH2R06 uses ST Turbo 2 600 V planar Pt STTH2R06 STTH2R06A doping technology. It is specially suited for switching mode base drive and transistor circuits. Packaged in axial, SMA, SMB and SMC, this device is intended for use in high frequency inverters, free wheeling and polarity protection. SMC SMB STTH2R06S STTH2R06U Table 1. Device summary Symbol Value I 2 A F(AV) V 600 V RRM T 175 C j V (typ) 1.0 V F t (typ) 35 ns rr December 2009 Doc ID 10757 Rev 4 1/10 www.st.com 10Characteristics STTH2R06 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit V Repetitive peak reverse voltage 600 V RRM I Forward rms current 7 A F(RMS) DO-41 T = 70 C L SMA T = 85 C L I Average forward current = 0.5 2A F(AV) SMB T = 100 C L SMC T = 115 C L DO-41 40 t = 10ms p I Surge non repetitive forward current A FSM SMA / SMB / sinusoidal 30 SMC T Storage temperature range -65 to + 175 C stg T Operating junction temperature range -40 to + 175 C j Table 3. Thermal resistance Symbol Parameter Maximum Unit DO-41 L = 5 mm 35 SMA 30 R Junction to lead C/W th(j-l) SMB 25 SMC 20 Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C -- 2 j Reverse leakage (1) I V = V A R R RRM current T = 150 C - 12 85 j T = 25 C -- 1.7 j (2) V Forward voltage drop I = 2 A V F F T = 150 C - 1.0 1.25 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the maximum conduction losses use the following equation: 2 P = 1 x I + 0.125 I F(AV) F (RMS) 2/10 Doc ID 10757 Rev 4