STTH3002G-TR STMicroelectronics

STTH3002 Ultrafast recovery diode Main product characteristics A K I 30 A F(AV) V 200 V RRM T (max) 175 C j V (typ) 0.77 V F t (typ) 22 ns rr A A Features and benefits K K DO-247 DOP3I Very low conduction losses STTH3002W STTH3002PI Negligible switching losses Low forward and reverse recovery time High junction temperature K Description The STTH3002 uses ST s new 200 V planar Pt A doping technology, and is specially suited for switching mode base drive and transistor circuits. NC Packaged in DO-247, DOP3I, and DPAK, this 2 device is intended for use in low voltage, high DPAK frequency inverters, free wheeling and polarity STTH3002G protection. Order codes Part Number Marking STTH3002W STTH3002 STTH3002PI STTH3002 STTH3002G STTH3002 STTH3002G-TR STTH3002 May 2006 Rev 1 1/10 www.st.comCharacteristics STTH3002 1 Characteristics Table 1. Absolute ratings (limiting values at T = 25 C, unless otherwise specified) j Symbol Parameter Value Unit V Repetitive peak reverse voltage 200 V RRM I RMS forward current 50 A F(RMS) DO-247 T = 135 C c I Average forward current, = 0.5 DOP3I T = 115 C 30 A F(AV) c 2 D PAK T = 135 C c I Surge non repetitive forward current t = 10 ms Sinusoidal 300 A FSM p T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j Table 2. Thermal parameters Symbol Parameter Value Unit DO-247 1.2 R Junction to case DOP3I 1.8 C/W th(j-c) 2 D PAK 1.2 Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 20 j (1) I Reverse leakage current V = V A R R RRM T = 150 C 20 200 j T = 125 C I = 25 A 0.77 0.85 j F (2) V Forward voltage drop T = 25 C 1.05 V F j I = 30 A F T = 150 C 0.8 0.88 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the conduction losses use the following equation: 2 P = 0.67 x I + 0.007 I F(AV) F (RMS) 2/10