STTH2003CGY-TR STMicroelectronics

STTH2003C-Y Automotive high efficiency ultrafast diode Datasheet production data Features A1 High junction temperature K Combines highest recovery and reverse A2 voltage performance Ultrafast, soft and noise-free recovery AEC-Q101 qualified Description K This dual center tap rectifier is suited for switch mode power supplies and high frequency DC to DC converters. A2 2 Packaged in D PAK, this device is intended for A1 use in low voltage, high frequency inverters, free 2 D PAK wheeling and polarity protection for automotive STTH2003CGY-TR applications. Table 1. Device summary I (AV) 2 x 10 A F V 300 V RRM T (max) 175 C j V (max) 1 V F t (max) 40 ns rr October 2012 Doc ID 022396 Rev 1 1/7 This is information on a product in full production. www.st.com 7Characteristics STTH2003C-Y 1 Characteristics Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 300 V RRM I Forward current rms 48 A F(RMS) Per diode 10 I Average forward current, = 0.5 T = 140 C A F(AV) c Per device 20 I Surge non repetitive forward current t = 10 ms sinusoidal (T = 25 C) 110 A FSM p j T Storage temperature range -65 to + 175 C stg T Operating junction temperature range -40 to + 175 C j Table 3. Thermal resistance Symbol Parameter Value (Max.) Unit Per diode 2.5 R Junction to case C/W th(j-c) Total 1.3 Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 20 j (1) I Reverse leakage current V = 300 V A R R T = 125 C 30 300 j T = 25 C 1.25 j (2) V Forward voltage drop I = 10 A V F F T = 125 C 0.85 1 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.75 x I + 0.025 I F(AV) F (RMS)) 2/7 Doc ID 022396 Rev 1