STTH12S06FP STMicroelectronics

STTH12S06 Turbo 2 ultrafast high voltage rectifier Table 1. Main product characteristics I 12 A F(AV) V 600 V RRM I 6 A RM (typ.) T 175 C j (max) V 1.5 V F (typ) t 14 ns rr (typ) A Features and benefits K Ultrafast recovery Low reverse recovery current TO-220FPAC STTH12S06FP Reduces losses in diode and switching transistor Low thermal resistance Higher frequency operation Insulated voltage: 1500 V RMS Description ST s STTH12S06 is a state of the art Ultrafast efficiency of the application. This allows designers recovery diode. By the use of 600 V Pt doping to reduce the size of their heatsinks. Planar technology, this diode will outperform the This device is also intended for applications in power factor correction circuits operating in power supplies and power conversions systems, hardswitching conditions. The extremely low and other power switching applications. reverse recovery current of the STTH12S06, reduces significantly the switching power losses of the MOSFET, and thus increases the Table 2. Absolute ratings (limiting values at 125 C, unless otherwise stated) Symbol Parameter Value Unit V Repetitive peak reverse voltage 600 V RRM I ) Average forward current 12 A F(AV I Surge non repetitive forward current t = 10 ms sinusoidal 100 A FSM p T Storage temperature range - 65 + 175 C stg T Maximum operating junction temperature 175 C j October 2007 Rev 1 1/6 www.st.com 6Characteristics STTH12S06 1 Characteristics Table 3. Thermal resistances Symbol Parameter Value Unit Rth (j-c) Junction to case 4.6 C/W Table 4. Static electrical characteristics Symbol Parameter Tests conditions Min. Typ. Max. Unit T = 25 C 30 j I Reverse leakage current V = 600 V A R R T = 125 C 35 400 j T = 25 C 3.4 j V Forward voltage drop I = 12 A V F F T = 150 C 1.5 1.9 j Table 5. Dynamic electrical characteristics Symbol Tests conditions Min. Typ. Max. Unit t I = 1 A dI /dt = - 200 A/s V = 30 V 14 21 ns rr F F R V = 400 V I = 12A R F I 6.0 8.0 A RM dI /dt = - 200 A/s F T = 125 C j S factor 0.3 V = 200 V I = 12A R F dI /dt = - 200 A/s F Q 160 nC rr Figure 1. Conduction losses versus Figure 2. Forward voltage drop versus average current forward current I (A) P(W) FM 100 34 32 =0.05 =0.1 90 =0.2 =0.5 =1 30 28 TTjj=150=150CC 80 (Maxim(Maximum vum values)alues) 26 24 70 22 60 20 TT =150=150CC jj 18 (T(Typicalypical vvalues)alues) T =25C j 50 16 (Maximum values) 14 40 12 10 30 8 T 20 6 4 10 I (A) F(AV) =tp/T tp 2 V (V) FM 0 0 0 2 4 6 8 10 12 14 16 01 23 45 67 2/6