STTH108 STMicroelectronics

STTH108 High voltage ultrafast rectifier Features Low forward voltage drop High reliability A High surge current capability A Soft switching for reduced EMI disturbances Planar technology K K Description SMA DO-41 (JEDEC DO-214AC) STTH108 The STTH108, which is using ST ultrafast high STTH108A voltage planar technology, is specially suited for free-wheeling, clamping, snubbering, Table 1. Device summary demagnetization in power supplies and other power switching applications. Symbol Value I 1 A F(AV) V 800 V RRM T (max) 175 C j V (max) 1.25 V F October 2009 Doc ID 9342 Rev 3 1/6 www.st.com 6Characteristics STTH108 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit V Repetitive peak reverse voltage 800 V RRM V Voltage rms 560 V (RMS) SMA T = 110 C = 0.5 L I Average forward current 1A F(AV) DO-41 T = 130 C = 0.5 L SMA 20 I Forward Surge current t = 8.3 ms A FSM DO-41 25 T Storage temperature range -50 to + 175 C stg T Maximum operating junction temperature 175 C j Table 3. Thermal resistance Symbol Parameter Value Unit SMA 30 R Junction to lead th(j-l) Lead length = 10 mm DO-41 45 C/W R Junction to ambient Lead length = 10 mm DO-41 110 th(j-a) Table 4. Static electrical characteristics Symbol Parameter Tests conditions Min. Typ. Max. Unit T = 25 C 5 j Reverse leakage I V = 800 V A R R current T = 125 C 1 50 j T = 25 C 1.65 j V Forward voltage drop I = 1 A V F F T = 125 C 0.89 1.25 j To evaluate the conduction losses use the following equation: 2 P = 1.05 x I + 0.20 I F(AV) F (RMS) Table 5. Dynamic electrical characteristics Symbol Parameter Tests conditions Min. Typ. Max. Unit I = 0.5 A, F Reverse t T = 25 C I = 0.25 A 75 ns rr j rr recovery time I = 1 A R I = 1 A, F Forward t T = 25 C dI /dt = 50 A/ms 200 ns fr j F recovery time V = 1.1 x V max FR F Forward I = 1 A, F V T = 25 C 12 V FP j recovery voltage dI /dt = 50 A/ms F 2/6 Doc ID 9342 Rev 3