STTH1002C High efficiency ultrafast diode Datasheet - production data Features . Suited for SMPS Low losses Low forward and reverse recovery times . Insulated package: TO-220FPAB Insulating voltage: 2000 V sine RMS High junction temperature . Low leakage current . % 2 )3 7 . ,3 ECOPACK 2 compliant component for DPAK and DPAK on demand . Description Dual center tap rectifier suited for switch mode power supplies and high frequency DC to DC converters Packaged in DPAK, DPAK, TO-220AB, IPAK 2 % 7 and TO-220FPAB, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. Table 1. Device summary Symbol Value I Up to 2 x 8 A F(AV) . 3 V 200 V RRM T (max) 175 C j V (typ) 0.78 V F t (typ) 20 ns rr . 3 September 2016 DocID10182 Rev 8 1/17 This is information on a product in full production. www.st.comCharacteristics STTH1002C 1 Characteristics Table 2. Absolute ratings (limiting values per diode at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 200 V RRM 2 2 I PAK, D PAK,TO-220AB, TO-220FPAB 20 I Forward rms current A F(RMS) DPAK 10 T = 155 C Per diode 5 c 2 T = 150 C Per device 10 c I PAK, DPAK, 2 D PAK,TO-220AB T = 135 C Per diode 8 c T = 125 C Per device 16 c Average forward current I A F(AV) = 0.5, square wave T = 140 C Per diode 5 c T = 120 C Per device 10 c TO-220FPAB T = 110 C Per diode 8 c T = 75 C Per device 16 c t = 10 ms sinusoidal I Surge non repetitive forward current 50 A p FSM T Storage temperature range -65 to +175 C stg T Maximum operating junction temperature 175 C j Table 3. Thermal parameter Symbol Parameter Max. value Unit Per diode 4.0 2 2 I PAK, DPAK, D PAK,TO-220AB Per device 2.5 R Junction to case th(j-c) Per diode 6.5 TO-220FPAB C/W Per device 5.0 2 2 I PAK, DPAK, D PAK,TO-220AB 1.0 R Coupling th(c) TO-220FPAB 3.5 When the diodes 1 and 2 are used simultaneously: T (diode1) = P(diode1) x R (per diode) + P(diode2) x R j th(j-c) th(c) 2/17 DocID10182 Rev 8