STS6NF20V STMicroelectronics

STS6NF20V Datasheet N-channel 20 V, 30 m typ., 6 A, 2.7 V drive, STripFET II Power MOSFET in an SO-8 package 5 Features 8 V R max. I Order code DS DS(on) D 40 m ( 4.5 V) 4 STS6NF20V 20 V 6 A 1 45 m ( 2.7 V) SO-8 Ultra low threshold gate drive 100% avalanche tested Low gate charge 1 8 S D Applications 2 7 Switching applications S D Description S D 3 6 This Power MOSFET has been developed using STMicroelectronics unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced G D high-efficiency isolated DC-DC converters for telecom and computer applications, 4 5 and applications with low gate charge driving requirements. SC12830N Product status link STS6NF20V Product summary Order code STS6NF20V Marking 6F20V- Package SO-8 Packing Tape and reel DS2184 - Rev 5 - November 2020 www.st.com For further information contact your local STMicroelectronics sales office.STS6NF20V Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 20 V DS V Gate-source voltage 12 V GS Drain current (continuous) at T = 25 C 6 A amb I D Drain current (continuous) at T = 100 C 3.8 A amb (1) I Drain current (pulsed) 24 A DM P Total power dissipation at T = 25 C 2.5 W TOT amb T Storage temperature range C stg -55 to 150 T Operating junction temperature range C j 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R thj-amb Thermal resistance junction-ambient 50 C/W DS2184 - Rev 5 page 2/15