STS8N6LF6AG Datasheet Automotive-grade N-channel 60 V, 21 m typ., 8 A STripFET F6 Power MOSFET in an SO-8 package 5 Features 8 V R max. I P Order code DS DS(on) D TOT STS8N6LF6AG 60 V 24 m 8 A 3.2 W 4 1 SO-8 AEC-Q101 qualified Very low on-resistance Very low gate charge D(5, 6, 7, 8) High avalanche ruggedness Low gate drive power loss Logic level G(4) Applications Switching applications S(1, 2, 3) AM01475v3 Description This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all packages. DS(on) Product status link STS8N6LF6AG Product summary Order code STS8N6LF6AG Marking 8N6LF6 Package SO-8 Packing Tape and reel DS11956 - Rev 3 - July 2021 www.st.com For further information contact your local STMicroelectronics sales office.STS8N6LF6AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 60 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 8 amb (1) I A D Drain current (continuous) at T = 100 C 5.8 amb (2) I Drain current (pulsed) 32 A DM P Total power dissipation at T = 25 C 3.2 W TOT amb T Storage temperature range C stg -55 to 175 T Operating junction temperature range C J 1. When mounted on a 1-inch FR-4, 2 Oz copper board, t < 10 s. 2. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit (1) R Thermal resistance, junction-to-ambient 47 C/W thJA 1. When mounted on an 1-inch FR-4, 2 Oz copper board, t < 10 s. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, not repetitive 6 A AV (1) E Single pulse avalanche energy 72 mJ AS 1. Starting T = 25 C, I = I , V = 43.5 V. J D AV DD DS11956 - Rev 3 page 2/14