STSA1805 STMicroelectronics

STSA1805 LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA Ordering Marking Package Code / Shipment STSA1805 SA1805 TO-92 / Bulk STSA1805-AP SA1805 TO-92 / Ammopack VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC FAST-SWITCHING SPEED APPLICATIONS: EMERGENCY LIGHTING TO-92 VOLTAGE REGULATORS Bulk RELAY DRIVERS HIGH EFFICIENCY LOW VOLTAGE SWITCHING APPLICATIONS DESCRIPTION The device is manufactured in NPN Planar INTERNAL SCHEMATIC DIAGRAM Technology by using aBase Islan layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Base Voltage (I = 0) 150 V CBO E V Collector-Emitter Voltage (I = 0) 60 V CEO B V Emitter-Base Voltage (I = 0) 7 V EBO C I Collector Current 5 A C I Collector Peak Current (t < 5 ms) 15 A CM p I Base Current 2 A B o Ptot Total Dissipation at Tamb = 25 C 1.1 W o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j 1/8 September 2003 STSA1805 THERMAL DATA o R Thermal Resistance Junction-Ambient Max 114 C/W thj-amb o R Thermal Resistance Junction-case Max 83.3 C/W thj-case o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 40 V 0.1 A CBO CB Current (I = 0) E I Emitter Cut-off Current V = 4 V 0.1 A EBO EB (I = 0) C V Collector-Base 150 V (BR)CBO I = 100 A C Breakdown Voltage (I = 0) E V * Collector-Emitter I = 1 mA 60 V (BR)CEO C Breakdown Voltage (I = 0) B V(BR)EBO Emitter-Base I = 100 A 7V E Breakdown Voltage (I = 0) C V * Collector-Emitter I = 100 mA I = 5 mA 50 mV CE(sat) C B Saturation Voltage I = 2 A I = 50 mA 150 300 mV C B I = 3 A I = 150 mA 200 400 mV C B IC = 5 A IB = 200 mA 600 mV VBE(sat)* Base-Emitter IC = 2 A IB = 100 mA 0.9 1.2 V Saturation Voltage h * DC Current Gain I = 100 mA V = 2 V 200 400 FE C CE I = 5 A V = 2 V 85 C CE IC = 10 A VCE = 2 V 20 fT Transition frequency VCE = 10 V IC = 50 mA 150 MHz CCBO Collector-Base VCB = 10 V f = 1 MHz 50 pF Capacitance RESISTIVE LOAD t Turn- on Time I = 1 A V = 30 V 50 ns on C CC t Storage Time I = - I = 0.1 A 1.35 s s B1 B2 t Fall Time 120 ns f * Pulsed: Pulse duration = 300s, duty cycle = 1.5 % 2/8