X-On Electronics has gained recognition as a prominent supplier of TT8J3TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. TT8J3TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TT8J3TR ROHM

Name: TT8J3TR
Brand: ROHM
SKU: TT8J3TR_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

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See Product Specifications

Part No.	TT8J3TR
Manufacturer:	ROHM
Category:	MOSFETs
Description:	MOSFET 4V Drive Pch+Pc Si MOSFET
Datasheet:	TT8J3TR Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

TT8J3TR More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 MOQ : 1 Multiples : 1	1 : USD 0.6409 10 : USD 0.4436 100 : USD 0.4425 500 : USD 0.4392 1000 : USD 0.4314 3000 : USD 0.234 6000 : USD 0.233 9000 : USD 0.224		N/A Obsolete

We are delighted to provide the TT8J3TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TT8J3TR and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

TT8J3 Datasheet -30V Pch+Pch Middle Power MOSFET llOutline TSST8 V -30V DSS R (Max.) 84m DS(on) I 2.5A D P 1.25W D llFeatures llInner circuit 1) Low on - resistance. 2) Small Surface Mount Package . 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking J03 llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage -30 V DSS Continuous drain current I 2.5 A D *1 I Pulsed drain current 6 A D,pulse V Gate - Source voltage 20 V GSS total 1.25 *2 P Power dissipation W D element 1.0 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.001 TT8J3 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - 100 - *2 Thermal resistance, junction - ambient R thJA element - 125 - llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V (BR)DSS I = -1mA D Breakdown voltage - -24.1 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current Gate - Source I V = 0V, V = 20V - - 10 A GSS DS GS leakage current Gate threshold V V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D voltage V I = -1mA GS(th) D Gate threshold voltage - 3.3 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -2.5A - 65 84 GS D Static drain - source *3 R V = -4.5V, I = -1.2A - 100 130 m DS(on) GS D on - state resistance V = -4V, I = -1.2A - 120 160 GS D *3 g Transconductance V = -10V, I = -2.5A 1.8 - - S fs DS D *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board. *3 Pulsed www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/11 20150730 - Rev.001

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer ROHM ROHM
Product Category MOSFETs MOSFETs
RoHS - XON Y Y
Id - Continuous Drain Current 2.5 A 2.5 A
Vds - Drain-Source Breakdown Voltage 30 V 30 V
Rds On - Drain-Source Resistance 65 mOhms , 65 mOhms 65 mOhms , 65 mOhms
Transistor Polarity P - Channel P - Channel
Vgs th - Gate-Source Threshold Voltage 2.5 V 2.5 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 1.25 W 1.25 W
Mounting Style Smd/Smt Smd/Smt
Package / Case TSST - 8 TSST - 8
Packaging Cut Tape Cut Tape
Technology Si Si
Number of Channels 2 Channel 2 Channel
Vgs - Gate-Source Voltage 20 V 20 V
Qg - Gate Charge 4.8 nC , 4.8 nC 4.8 nC , 4.8 nC
Channel Mode Enhancement Enhancement
Configuration Dual Dual
Transistor Type 2 P - Channel 2 P - Channel
Brand Rohm Semiconductor Rohm Semiconductor
Forward Transconductance - Min 1.8 S, 1.8 S 1.8 S, 1.8 S
Fall Time 14 ns , 14 ns 14 ns , 14 ns
Product Type Mosfet Mosfet
Rise Time 20 ns , 20 ns 20 ns , 20 ns
Factory Pack Quantity : 3000 3000
Subcategory Mosfets Mosfets
Typical Turn-Off Delay Time 35 ns , 35 ns 35 ns , 35 ns
Typical Turn-On Delay Time 7 ns , 7 ns 7 ns , 7 ns
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Taric 8541290000 8541290000