TT8J3 Datasheet -30V Pch+Pch Middle Power MOSFET llOutline TSST8 V -30V DSS R (Max.) 84m DS(on) I 2.5A D P 1.25W D llFeatures llInner circuit 1) Low on - resistance. 2) Small Surface Mount Package . 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking J03 llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage -30 V DSS Continuous drain current I 2.5 A D *1 I Pulsed drain current 6 A D,pulse V Gate - Source voltage 20 V GSS total 1.25 *2 P Power dissipation W D element 1.0 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.001 TT8J3 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - 100 - *2 Thermal resistance, junction - ambient R thJA element - 125 - llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V (BR)DSS I = -1mA D Breakdown voltage - -24.1 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current Gate - Source I V = 0V, V = 20V - - 10 A GSS DS GS leakage current Gate threshold V V = -10V, I = -1mA -1.0 - -2.5 V GS(th) DS D voltage V I = -1mA GS(th) D Gate threshold voltage - 3.3 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -2.5A - 65 84 GS D Static drain - source *3 R V = -4.5V, I = -1.2A - 100 130 m DS(on) GS D on - state resistance V = -4V, I = -1.2A - 120 160 GS D *3 g Transconductance V = -10V, I = -2.5A 1.8 - - S fs DS D *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board. *3 Pulsed www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/11 20150730 - Rev.001