1.5V Drive Nch + Pch MOSFET TT8M1 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET/ TSST8 Silicon P-channel MOSFET (8) (7) (6) (5) Features 1) Low on-resistance. (1) (2) (3) (4) 2) High power package (TSST8). 3) Low voltage drive (1.5V drive). Abbreviated symbol :M01 Application Switching Packaging specifications Inner circuit Package Taping Type Code TR Basic ordering unit (pieces) 3000 (1) Tr1 Source TT8M1 (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain Absolute maximum ratings (Ta = 25 C) (7) Tr1 Drain (8) Tr1 Drain Limits 1 ESD PROTECTION DIODE Parameter Symbol Unit 2 BODY DIODE Tr1 : N-ch Tr2 : P-ch Drain-source voltage V 20 20 V DSS Gate-source voltage V 10 10 V GSS Continuous I 2.5 2.5 A D Drain current *1 Pulsed I 10 10 A DP Continuous I 0.8 0.8 A Source current s *1 (Body Diode) 10 10 A Pulsed I sp *2 1.25 W / TOTAL P Power dissipation D 1 W / ELEMENT Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. www.rohm.com 2010.08 - Rev.A 1/8 2010 ROHM Co., Ltd. All rights reserved.TT8M1 Data Sheet Electrical characteristics (Ta = 25 C) <Tr1(Nch)> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV = 10V, V =0V GSS GS DS Drain-source breakdown voltage V 20 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =20V, V =0V DSS DS GS Gate threshold voltage V 0.3 - 1.0 V V =10V, I =1mA GS (th) DS D -52 72 I =2.5A, V =4.5V D GS -65 90 I =2.5A, V =2.5V Static drain-source on-state D GS * R m DS (on) resistance 85 120 I =1.2A, V =1.8V D GS 100 140 I =0.5A, V =1.5V D GS * Forward transfer admittance l Y l 2.7 - - S V =10V, I =2.5A fs DS D Input capacitance C - 260 - pF V =10V iss DS Output capacitance C - 65 - pF V =0V oss GS Reverse transfer capacitance C - 35 - pF f=1MHz rss Turn-on delay time t -9 - nsI =1.2A, V 10V ** d(on) D DD Rise time t - 17 - ns V =4.5V r ** GS Turn-off delay time t - 28 - ns R 8.3 ** d(off) L Fall time t - 17 - ns R =10 ** f G Total gate charge Q ** - 3.6 - nC I =2.5A, V 10V g D DD Gate-source charge Q ** - 0.7 - nC V =4.5V,R 4 gs GS L Gate-drain charge Q - 0.6 - nC R =10 gd ** G *Pulsed Body diode characteristics (Source-Drain) (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V - - 1.2 V I =2.5A, V =0V SD s GS *Pulsed www.rohm.com 2010.08 - Rev.A 2/8 2010 ROHM Co., Ltd. All rights reserved.