X-On Electronics has gained recognition as a prominent supplier of TT8M3TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. TT8M3TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.
We are delighted to provide the TT8M3TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TT8M3TR and other electronic components in the MOSFETs category and beyond.
1.5V Drive Nch + Pch MOSFET TT8M3 Structure Silicon N-channel MOSFET/ Dimensions (Unit : mm) TSST8 Silicon P-channel MOSFET (8) (7) (6) (5) Features 1) Low On-state resistance. (1) (2) (3) (4) 2) Low voltage drive(1.5V). 3) High power package. Abbreviated symbol :M03 Application Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type Code TR (1) Tr1 Source Basic ordering unit (pieces) 3000 (2) Tr1 Gate 2 2 TT8M3 (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain 1 (6) Tr2 Drain (7) Tr1 Drain (1) (2) (3) (4) Absolute maximum ratings (Ta = 25 C) (8) Tr1 Drain 1 ESD PROTECTION DIODE Limits 2 BODY DIODE Parameter Symbol Unit Tr1 : N-ch Tr2 : P-ch Drain-source voltage V 20 20 V DSS Gate-source voltage V 10 10 V GSS Continuous I 2.5 2.4 A D Drain current *1 Pulsed I 10 9.6 A DP Continuous I 0.8 0.8 A Source current s *1 (Body Diode) 10 9.6 A Pulsed I sp *2 1.25 W / TOTAL P Power dissipation D 1.0 W / ELEMENT Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. www.rohm.com 2010.07 - Rev.A 1/8 2010 ROHM Co., Ltd. All rights reserved.TT8M3 Data Sheet Electrical characteristics (Ta = 25 C) <Tr1(Nch)> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV =10V, V =0V GSS GS DS Drain-source breakdown voltage V 20 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =20V, V =0V DSS DS GS Gate threshold voltage V 0.3 - 1.0 V V =10V, I =1mA GS (th) DS D -52 72 I =2.5A, V =4.5V D GS -65 90 I =2.5A, V =2.5V Static drain-source on-state D GS R * m DS (on) resistance - 85 120 I =1.2A, V =1.8V D GS - 100 140 I =0.5A, V =1.5V D GS * Forward transfer admittance l Y l 2.7 - - S V =10V, I =2.5A fs DS D Input capacitance C - 260 - pF V =10V iss DS Output capacitance C - 65 - pF V =0V oss GS Reverse transfer capacitance C - 35 - pF f=1MHz rss Turn-on delay time t -9 - nsI =1.2A, V 10V * d(on) D DD Rise time t * - 17 - ns V =4.5V r GS Turn-off delay time t * - 28 - ns R =8.3 d(off) L Fall time t * - 17 - ns R =10 f G * Total gate charge Q - 3.6 - nC I =2.5A, V 10V g D DD * Gate-source charge Q - 0.7 - nC V =4.5V,R =4 gs GS L Gate-drain charge Q * - 0.6 - nC R =10 gd G *Pulsed Body diode characteristics (Source-Drain) (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V - - 1.2 V I =2.5A, V =0V SD s GS *Pulsed www.rohm.com 2010.07 - Rev.A 2/8 2010 ROHM Co., Ltd. All rights reserved.
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