1.5V Drive Pch +SBD MOSFET TT8U1 z Structure z Dimensions (Unit : mm) Silicon P-channel MOSFET / schottky barrier diode TSST8 (8) (7) (6) (5) z Features 1) Low On-resistance. 2) High Power Package. (1) (2) (3) (4) 3) Low voltage drive. (1.5V) Abbreviated symbol : U01 Each lead has same dimensions z Applications Switching z Inner circuit z Packaging specifications (8) (7) (6) (5) Package Taping Type Code TR Basic ordering unit (pieces) 3000 1 TT8U1 (1) Anode (2) Anode (3) Source (4) Gate (5) Drain (1) (2) (3) (4) (6) Drain (7) Cathode 1 BODY DIODE (8) Cathode z Absolute maximum ratings (Ta=25C) <MOSFET> Parameter Symbol Limits Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS 10 V Continuous ID 2.4 A Drain current 1 Pulsed IDP 9.6 A Source current Continuous IS 0.8 A 1 (Body diode) Pulsed ISP 9.6 A Channel temperature Tch 150 C 2 P Power dissipation D 1.0 W / ELEMENT 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board <Di> Parameter Symbol Limits Unit Repetitive peak reverse voltage V 30 V RM V Reverse voltage R 20 V I Forward current F 1.0 A 1 Forward current surge peak IFSM 3.0 A Junction temperature Tj 150 C 2 Power dissipation PD 1.0 W / ELEMENT 1 60HZ / 1Cycle 2 Mounted on a ceramic board <MOSFET and Di> Parameter Symbol Limits Unit Total power dissipation PD 1.25 W / TOTAL Range of Storage temperature Tstg 55 to +150 C Mounted on a ceramic board www.rohm.com c 2009.06 - Rev.A 2009 ROHM Co., Ltd. All rights reserved. 1/5 TT8U1 Data Sheet z Electrical characteristics (Ta=25C) <MOSFET> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I 100 nA V =10V, V =0V GSS GS DS Drain-source breakdown voltage V(BR) DSS 20 VID= 1mA, VGS=0V Zero gate voltage drain current IDSS 1 AVDS= 20V, VGS=0V Gate threshold voltage VGS (th) 0.3 1.0 V VDS= 10V, ID= 1mA 80 105 m ID= 2.4A, VGS= 4.5V Static drain-source on-state 105 140 m ID= 1.2A, VGS= 2.5V RDS (on) resistance 150 225 m ID= 1.2A, VGS= 1.8V 180 360 m ID= 0.5A, VGS= 1.5V Forward transfer admittance Y 2.4 SV = 10V, I = 2.4A fs DS D Input capacitance Ciss 850 pF VDS= 10V Output capacitance Coss 60 pF VGS=0V Reverse transfer capacitance C 50 pF f=1MHz rss Turn-on delay time td (on) 9 ns VDD 10V VGS= 4.5V Rise time tr 25 ns ID= 1.2A Turn-off delay time t 55 ns d (off) RL 8.3 Fall time tf 45 ns RG=10 VDD 10V Total gate charge Qg 6.7 nC VGS= 4.5V Gate-source charge Q 1.7 nC gs I = 2.4A D R 4.2 / R G=10 Gate-drain charge Qgd0.6 nC L Pulsed <MOSFET> Body diode (source-drain) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS= 2.4A, VGS=0V Pulsed <Di> Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage drop VF 0.37 0.41 V IF= 1.0A V =20V Reverse leakage IR 500 A R www.rohm.com c 2009.06 - Rev.A 2009 ROHM Co., Ltd. All rights reserved. 2/5