TT8U2TR ROHM

TT8U2 Datasheet 1.5V Drive Pch MOSFET + Schottky Barrier Diode llOutline TSST8 V -20V DSS R (Max.) 105m DS(on) I 2.4A D P 1.25W D llFeatures llInner circuit 1) Pch MOSFET and shottky barrier diode are put in TSST8 package. 2) High-speed switching and Low on- resistance. 3) Low voltage drive(1.5V) 4) Built in Low I shottky barrier diode. R llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking U02 llAbsolute maximum ratings (T = 25C) a < MOSFET > Parameter Symbol Value Unit Drain - Source voltage V -20 V DSS V Gate - Source voltage 10 V GSS I Continuous drain current 2.4 A D *1 I Pulsed drain current 9.6 A D, pulse I Continuous source current (body diode) -0.8 A S *1 I Pulsed source current (body diode) -9.6 A S, pulse *2 P Power dissipation 1.0 W/element D T Junction temperature 150 j www.rohm.com 1/12 2015 ROHM Co., Ltd. All rights reserved. 20150731 - Rev.001 TT8U2 Datasheet llAbsolute maximum ratings (T = 25C) a < Diode > Parameter Symbol Value Unit V Repetitive peak reverse voltage 30 V RM V Reverse voltage 20 V R I Forward current 1.0 A F *3 I Forward current surge peak 3.0 A FSM *2 P Power dissipation 1.0 W/element D T Junction temperature 150 j < MOSFET + Diode > Parameter Symbol Value Unit *2 P Power dissipation 1.25 W/total D T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a < MOSFET > Values Parameter Symbol Conditions Unit Min. Typ. Max. I Gate - Source leakage current V = 10V, V = 0V - - 100 nA GSS GS DS Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage Zero gate voltage I V = -20V, V = 0V - - -1 A DSS DS GS drain current V Gate threshold voltage V = -10V, I = -1mA -0.3 - -1.0 V GS(th) DS D V = -4.5V, I = -2.4A - 80 105 GS D V = -2.5V, I = -1.2A - 105 140 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.8V, I = -1.2A - 150 225 GS D V = -1.5V, I = -0.5A - 180 360 GS D Forward Transfer *4 Y V = -10V, I = -2.4A 2.4 - - S fs DS D Admittance www.rohm.com 2/12 20150731 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.