X-On Electronics has gained recognition as a prominent supplier of TT8U2TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. TT8U2TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TT8U2TR ROHM

TT8U2TR electronic component of ROHM
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See Product Specifications
Part No.TT8U2TR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Trans MOSFET P-CH & SBD;20V 2.4A 8-Pin TSST T/R
Datasheet: TT8U2TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.6967
10 : USD 0.6922
100 : USD 0.3857
500 : USD 0.3021
1000 : USD 0.2397
3000 : USD 0.1627
9000 : USD 0.1583
24000 : USD 0.1538
N/A

0
MOQ : 71
Multiples : 1
71 : USD 0.3963
N/A

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
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Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
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Subcategory
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We are delighted to provide the TT8U2TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TT8U2TR and other electronic components in the MOSFETs category and beyond.

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TT8U2 Datasheet 1.5V Drive Pch MOSFET + Schottky Barrier Diode llOutline TSST8 V -20V DSS R (Max.) 105m DS(on) I 2.4A D P 1.25W D llFeatures llInner circuit 1) Pch MOSFET and shottky barrier diode are put in TSST8 package. 2) High-speed switching and Low on- resistance. 3) Low voltage drive(1.5V) 4) Built in Low I shottky barrier diode. R llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking U02 llAbsolute maximum ratings (T = 25C) a < MOSFET > Parameter Symbol Value Unit Drain - Source voltage V -20 V DSS V Gate - Source voltage 10 V GSS I Continuous drain current 2.4 A D *1 I Pulsed drain current 9.6 A D, pulse I Continuous source current (body diode) -0.8 A S *1 I Pulsed source current (body diode) -9.6 A S, pulse *2 P Power dissipation 1.0 W/element D T Junction temperature 150 j www.rohm.com 1/12 2015 ROHM Co., Ltd. All rights reserved. 20150731 - Rev.001 TT8U2 Datasheet llAbsolute maximum ratings (T = 25C) a < Diode > Parameter Symbol Value Unit V Repetitive peak reverse voltage 30 V RM V Reverse voltage 20 V R I Forward current 1.0 A F *3 I Forward current surge peak 3.0 A FSM *2 P Power dissipation 1.0 W/element D T Junction temperature 150 j < MOSFET + Diode > Parameter Symbol Value Unit *2 P Power dissipation 1.25 W/total D T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a < MOSFET > Values Parameter Symbol Conditions Unit Min. Typ. Max. I Gate - Source leakage current V = 10V, V = 0V - - 100 nA GSS GS DS Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage Zero gate voltage I V = -20V, V = 0V - - -1 A DSS DS GS drain current V Gate threshold voltage V = -10V, I = -1mA -0.3 - -1.0 V GS(th) DS D V = -4.5V, I = -2.4A - 80 105 GS D V = -2.5V, I = -1.2A - 105 140 GS D Static drain - source *4 R m DS(on) on - state resistance V = -1.8V, I = -1.2A - 150 225 GS D V = -1.5V, I = -0.5A - 180 360 GS D Forward Transfer *4 Y V = -10V, I = -2.4A 2.4 - - S fs DS D Admittance www.rohm.com 2/12 20150731 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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