DMN32D2LDF COMMON SOURCE DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Common Source Dual N-Channel MOSFET Case: SOT-353 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage, 1.2V max Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capacitance Fast Switching Speed Terminal Connections: See Diagram Low Input/Output Leakage Terminals: Finish Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Small Surface Mount Package Marking Information: See Page 3 ESD Protected Gate Ordering Information: See Page 3 Lead Free By Design/RoHS Compliant (Note 2) Weight: 0.006 grams (approximate) Gree Device (Note 3) Qualified to AEC-Q 101 Standards for High Reliability G S G 2 1 G SG 2 1 SOT-353 Q Q 1 2 D D 2 1 D D ESD PROTECTED 2 1 BOTTOM VIEW TOP VIEW Schematic Diagram TOP VIEW Maximum Ratings Q , Q T = 25C unless otherwise specified A 1 2 Characteristic Symbol Value Unit Drain Source Voltage V 30 V DSS Gate-Source Voltage V 10 V GSS Drain Current (Note 1) I 400 mA D Thermal Characteristics Q , Q T = 25C unless otherwise specified 1 2 A Total Power Dissipation (Note 1) P 280 mW D Thermal Resistance, Junction to Ambient (Note 1) R 446 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Electrical Characteristics Q , Q T = 25C unless otherwise specified A 1 2 Characteristic SymbolMin Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage 30 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = 25C I 1 A V = 30V, V = 0V C DSS DS GS 10 V = 10V, V = 0V GS DS Gate-Body Leakage I A GSS 1 V = 5V, V = 0V GS DS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V 0.6 1.2 V V = V , I = 250A GS(th) DS GS D V = 1.8V, I = 20mA 2.2 GS D Static Drain-Source On-Resistance 1.5 R V = 2.5V, I = 20mA DS (ON) GS D 1.2 V = 4.0V, I = 100mA GS D Forward Transconductance Y 100 mS V =10V, I = 0.1A fs DS D Source-Drain Diode Forward Voltage 0.5 1.4 V V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS Input Capacitance C 39 pF iss V = 3V, V = 0V DS GS Output Capacitance 10 pF C oss f = 1.0MHz Reverse Transfer Capacitance C 3.6 pF rss Turn-on Time 11 nS t V = 5V, I = 10 mA, on DD D Switching Time V = 0-5V Turn-off Time 51 nS GS t off Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at DMN32D2LDF 2 of 4 January 2008 DMN32D2LDF Diodes Incorporated www.diodes.com Document number: DS31238 Rev. 3 - 2 NEW PRODUCT