X-On Electronics has gained recognition as a prominent supplier of DMN3150L-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN3150L-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMN3150L-7 Diodes Incorporated

DMN3150L-7 electronic component of Diodes Incorporated
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See Product Specifications
Part No.DMN3150L-7
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: 28V 3.8A 1.4W 85mO@4.5V,3.6A N Channel SOT-23 MOSFETs ROHS
Small signal diode, ultra fast recovery, low reverse leakage current.
Datasheet: DMN3150L-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1204 ea
Line Total: USD 0.6 
Availability - 3076
Ship by Wed. 04 Dec to Mon. 09 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
3076
Ship by Wed. 04 Dec to Mon. 09 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1204
50 : USD 0.0983
150 : USD 0.0871
500 : USD 0.0787
3000 : USD 0.0687
6000 : USD 0.0653

28479
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 0.319
10 : USD 0.2123
100 : USD 0.1122
1000 : USD 0.11
3000 : USD 0.0869

572
Ship by Mon. 25 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 0.518
10 : USD 0.385
25 : USD 0.294
100 : USD 0.1848
159 : USD 0.1078

250260
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0853

393
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 86
Multiples : 1
86 : USD 0.09

29100
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0983

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DMN3150L-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN3150L-7 and other electronic components in the MOSFETs category and beyond.

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The DMN3150L-7 is a small signal N-channel enhancement mode MOSFET transistor from Diodes Incorporated. It is designed for applications such as load and line switching, battery protection, and general level shifting and signal processing. This device is a 150 mA, -7V rated, with low gate charge and low on-state resistance. The DMN3150L-7 features very low gate-source threshold voltage and provides high current drive capability. It is available in a PowerPAK® SO-8 and MiniFLAT 8L package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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