Data Sheet 1.5V Drive Pch + Pch MOSFET TT8J13 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSST8 (8) (7) (6) (5) Features 1) Low On-resistance. 2) Small high power package. (1) (2) (3) (4) 3) Low voltage drive(1.5V drive). Abbreviated symbol : J13 Application Switching Inner circuit (8) (7) (6) (5) Packaging specifications Package Taping 2 2 (1) Tr1 Source Type Code TCR (2) Tr1 Gate Basic ordering unit (pieces) 3000 (3) Tr2 Source 1 1 (4) Tr2 Gate TT8J13 (5) Tr2 Drain (6) Tr2 Drain (1) (2) (3) (4) (7) Tr1 Drain 1 ESD PROTECTION DIODE (8) Tr1 Drain 2 BODY DIODE Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Drain-source voltage V 12 V DSS Gate-source voltage V 0 to 8 V GSS Continuous I 2.5 A D Drain current *1 Pulsed I 5A DP Continuous I 0.8 A Source current s *1 (Body Diode) Pulsed I 5A sp 1.25 W / TOTAL *2 Power dissipation P D 1 W / ELEMENT Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Thermal resistance Parameter Symbol Limits Unit 100 C / W /TOTAL * Channel to Ambient Rth (ch-a) 125 C / W /ELEMENT * Mounted on a ceramic board. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.03 - Rev.A 1/6Data Sheet TT8J13 Electrical characteristics (Ta = 25 C) <It is the same ratings for Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV = 8V, V =0V GSS GS DS Drain-source breakdown voltage V 12 - - V I = 1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 10 AV = 12V, V =0V DSS DS GS Gate threshold voltage V 0.3 - 1.0 V V = 6V, I = 1mA GS (th) DS D -44 62 I = 2.5A, V = 4.5V D GS -55 77 I = 1.2A, V = 2.5V Static drain-source on-state D GS R m DS (on) resistance - 75 110 I = 1.2A, V = 1.8V D GS - 90 180 I = 0.5A, V = 1.5V D GS * Forward transfer admittance l Y l 3.5 - - S I = 2.5A, V = 6V fs D DS Input capacitance C - 2000 - pF V = 6V iss DS Output capacitance C - 130 - pF V =0V oss GS Reverse transfer capacitance C - 120 - pF f=1MHz rss Turn-on delay time t - 11 - ns I = 1.2A, V 6V * d(on) D DD Rise time t - 40 - ns V = 4.5V r * GS Turn-off delay time t - 160 - ns R =5 * d(off) L Fall time t - 60 - ns R =10 ** f G Total gate charge Q ** - 16 - nC I = 2.5A g D Gate-source charge Q - 2.4 - nC V 6V ** gs DD Gate-drain charge Q - 2.2 - nC V = 4.5V gd ** GS *Pulsed Body diode characteristics (Source-Drain) (Ta = 25 C) <It is the same ratings for Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Forward Voltage V * -- 1.2 V I = 2.5A, V =0V SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.03 - Rev.A