DMN3018SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Max Low R Ensures On-State Losses are Minimized D DS(ON) V R Max (BR)DSS DS(ON) T = +25C Small form factor thermally efficient package enables higher C density end products (PowerDI ) 21m V = 10V 30A GS 30V Occupies just 33% of the board area occupied by SO-8 enabling 35m V = 4.5V 24A GS smaller end product ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) This MOSFET is designed to minimize the on-state resistance Qualified to AEC-Q101 standards for High Reliability (R ), yet maintain superior switching performance, making it DS(ON) An Automotive-Compliant Part is Available Under Separate ideal for high efficiency power management applications. Datasheet (DMN3018SFGQ) Mechanical Data Applications Backlighting Case: PowerDI3333-8 Power Management Functions Case Material: Molded Plastic,Gree Molding Compound. DC-DC Converters UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) D Pin 1 S S S G G D D ESD PROTECTED D Gate Protection D S Diode Top View Bottom View Top View Internal Schematic View Vie S S Pin 1 S Pin 1 S 1 8 S S 1 8 G G 2 7 2 7 3 6 6 D D 3 D 5 D Vie D D 4 w D D 4 5 w Ordering Information (Note 4) Part Number Case Packaging DMN3018SFG-7 PowerDI3333-8 2000/Tape & Reel DMN3018SFG-13 PowerDI3333-8 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN3018SFG Maximum Ratings ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage 25 V VGSS T = +25C 30 C Steady State A Continuous Drain Current (Note 6) V = 10V I GS D 25 T = +70C C T = +25C 8.5 A Steady State I A D 6.8 T = +70C A Continuous Drain Current (Note 6) V = 10V GS TA = +25C 11.3 t<10s A I D 9.1 T = +70C A T = +25C 6.6 A Steady State I A D 5.3 T = +70C A Continuous Drain Current (Note 6) V = 4.5V GS T = +25C 8.7 A t<10s A I D 7.0 T = +70C A Maximum Continuous Body Diode Forward Current (Note 5) 2.5 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 60 A DM Avalanche Current (Note 7) L = 0.1mH I 18 A AS Avalanche Energy (Note 7) L = 0.1mH E 16 mJ AS Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) 1.0 W P D Steady State 126 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 71 Total Power Dissipation (Note 6) 2.2 W P D Steady State 56 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 31 C/W Thermal Resistance, Junction to Case (Note 6) 7.0 RJC Operating and Storage Temperature Range -55 to 150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 30 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 24V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 1.7 2.1 V V = V , I = 250A GS(TH) DS GS D 16 21 V = 10V, I = 10A GS D Static Drain-Source On-Resistance m R DS(ON) 21 35 V = 4.5V, I = 8.5A GS D Diode Forward Voltage V 0.5 1.2 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 697 pF ISS V = 15V, V = 0V, DS GS Output Capacitance 97 pF C OSS f = 1.0MHz Reverse Transfer Capacitance 67 pF C RSS Gate resistance 1.47 R V = 0V, V = 0V,f = 1.0MHz G DS GS 6.0 nC Total Gate Charge (V = 4.5V) Q GS G Total Gate Charge (V = 10V) Q 13.2 nC V = 10V, V = 15V, GS G GS DS Gate-Source Charge Q 2.2 nC I = 9A GS D Gate-Drain Charge Q 1.8 nC GD Turn-On Delay Time t 4.3 ns D(ON) Turn-On Rise Time t 4.4 ns R V = 15V, V = 10V, DD GS Turn-Off Delay Time t 20.1 ns R = 15,I = 1A, R = 6 D(OFF) L D G Turn-Off Fall Time 4.1 ns t F Reverse Recovery Time 7.3 ns T RR I = 9A, di/dt = 500A/s F Reverse Recovery Charge 7.9 nC Q RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 2 of 6 DMN3018SFG November 2016 Diodes Incorporated www.diodes.com Document number: DS35638 Rev. 5 - 2