X-On Electronics has gained recognition as a prominent supplier of TT8K2TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. TT8K2TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TT8K2TR ROHM

TT8K2TR electronic component of ROHM
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See Product Specifications
Part No.TT8K2TR
Manufacturer: ROHM
Category: MOSFETs
Description: Mosfet Array 2 N-Channel (Dual) 30V 2.5A 1.25W Surface Mount 8-TSST
Datasheet: TT8K2TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.4493
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.1625
10 : USD 0.9816
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.1625
10 : USD 0.9816
N/A

Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.3154
N/A

Obsolete
0
MOQ : 78
Multiples : 1
78 : USD 1.2222
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Obsolete
   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Configuration
Transistor Type
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TT8K2TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TT8K2TR and other electronic components in the MOSFETs category and beyond.

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TT8K2 Datasheet 30V Nch + Nch Middle Power MOSFET llOutline TSST8 V 30V DSS R (Max.) 90m DS(on) I 2.5A D P 1.25W D llFeatures llInner circuit 1) Low on - resistance. 2) Built-in G-S protection diode. 3) Small surface mount package(TSST8) 4) 2.5V drive 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking K02 llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS Continuous drain current I 2.5 A D *1 I Pulsed drain current 10 A D,pulse V Gate - Source voltage 12 V GSS total 1.25 *2 P D Power dissipation element 1.0 W *3 P total 0.6 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.001 TT8K2 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - 100 *2 R thJA Thermal resistance, junction - ambient element - - 125 /W *3 R total - - 208 thJA llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 0V, V = 12V - - 10 A GSS DS GS leakage current Gate threshold V V = 10V, I = 1mA 0.5 - 1.5 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 2.5A - 65 90 GS D Static drain - source *4 R V = 4V, I = 2.5A - 70 95 m DS(on) GS D on - state resistance V = 2.5V, I = 2.5A - 95 130 GS D Gate input resistance R f = 1MHz, open drain - 20 - G Forward Transfer *4 Y V = 10V, I = 2.5A 2.2 - - S fs DS D Admittance www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/11 20150730 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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