2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 z Structure z Dimensions (Unit : mm) Silicon N-channel MOSFET/ TSST8 Silicon P-channel MOSFET (8) (7) (6) (5) z Features 1) Low on-state resistance. (1) (2) (3) (4) 2) Low voltage drive. 3) High power package. Abbreviated symbol : M02 Each lead has same dimensions z Application z Inner circuit Switching (8) (7) (6) (5) z Packaging specifications 2 2 Package Taping Type Code TR Basic ordering unit (pieces) 3000 (1) Tr1 Source TT8M2 (2) Tr1 Gate 1 1 (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (1) (2) (3) (4) (6) Tr2 Drain 1 ESD protection diode (7) Tr1 Drain 2 Body diode (8) Tr1 Drain z Absolute maximum ratings (Ta=25C) <Tr1 : Nch> Parameter Symbol Limits Unit Drainsource voltage VDSS 30 V Gatesource voltage VGSS 12 V 2.5 Continuous ID A Drain current 1 Pulsed IDP 10 A Continuous IS 0.8 A Source current (Body diode) 1 Pulsed ISP 10 A 1 Pw10s, Duty cycle1% www.rohm.com 2009.06 - Rev.A 1/8 c 2009 ROHM Co., Ltd. All rights reserved. TT8M2 Data Sheet <Tr2 : Pch> Parameter Symbol Limits Unit Drainsource voltage VDSS 20 V Gatesource voltage VGSS 10 V Continuous ID 2.5 A Drain current 1 Pulsed IDP 10 A Continuous IS 0.8 A Source current (Body diode) 1 Pulsed ISP 10 A 1 Pw10s, Duty cycle1% <Tr1 AND Tr2> Parameter Symbol Limits Unit 1.25 W / TOTAL 2 Total power dissipation PD 1.0 W / ELEMENT Channel temperature Tch 150 C Range of Storage temperature Tstg 55 to +150 C 2 Mounted on a ceramic board z Electrical characteristics (Ta=25C) < Characteristics for the Tr1( Nch ).> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage A IGSS 10 VGS=12V, VDS=0V Drain-source breakdown voltage V(BR) DSS 30 V ID=1mA, VGS=0V Zero gate voltage drain current I 1 A V =30V, V =0V DSS DS GS Gate threshold voltage V VGS (th) 0.5 1.5 VDS=10V, ID=1mA 65 90 m ID=2.5A, VGS=4.5V Static drain-source on-state R 70 95 m I =2.5A, V =4V DS (on) D GS resistance 95 130 m ID=2.5A, VGS=2.5V Forward transfer admittance Y 2.2 S V =10V, I =2.5A fs DS D Input capacitance pF Ciss 180 VDS=10V Output capacitance Coss 60 pF VGS=0V Reverse transfer capacitance C 35 pF f=1MHz rss Turn-on delay time ns td (on) 7 VDD 15V ID=1.2A Rise time tr 30 ns VGS=4.5V Turn-off delay time t 20 ns d (off) RL 12.5 Fall time ns tf 20 RG=10 Total gate charge Qg 3.2 nC V 15V, I =2.5A DD D Gate-source charge Q 0.9 nC V =4.5V gs GS Gate-drain charge nC RL 6, R G=10 Qgd0.4 Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS= 2.5A, VGS=0V Pulsed www.rohm.com 2009.06 - Rev.A 2/8 c 2009 ROHM Co., Ltd. All rights reserved.