A Product Line of DISCONTINUED Diodes Incorporated DMN3020LK3 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance I D V R Fast switching speed (BR)DSS DS(on) T = 25C A Green Component and RoHS compliant 16.7A 20m V = 10V GS 30V 34m V = 4.5V 12.6A GS Mechanical Data Case: TO252-3L Case Material: Molded Plastic Green Molding Compound, Description and Applications UL Flammability Classification Rating 94V-0 (Note 1) This new generation MOSFET has been designed to minimize the on- Moisture Sensitivity: Level 1 per J-STD-020D state resistance (R ) and yet maintain superior switching DS(on) Terminal Connections: See Diagram performance, making it ideal for high efficiency power management applications. Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Backlighting Marking Information: See Below DC-DC Converters Ordering Information: See Below Power management functions Weight: 0.33 grams (approximate) D D G D S G S Equivalent Circuit TOP VIEW PIN OUT -TOP VIEW Ordering Information (Note 1) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMN3020LK3-13 N3020L 13 16 2,500 Notes: 1. Diodes, Inc. defines Green products as those which are Eu RoHS compliant and contain no halogens or antimony compounds further information about Diodes Inc.s Green Policy can be found on our website. For packaging details, go to our website. Marking Information = Manufacturers Marking N3020L = Product Type Marking Code YYWW YYWW = Date Code Marking N3020L YY = Last two digits of year (ex: 09 = 2009) WW = Week (01-52) 1 of 8 May 2013 DMN3020LK3 Diodes Incorporated www.diodes.com Document Revision: 2 A Product Line of DISCONTINUED Diodes Incorporated DMN3020LK3 Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source voltage 30 V V DSS Gate-Source voltage V V 20 GS (Note 3) 16.7 Continuous Drain current V = 10V T =70C (Note 3) I 13.3 A GS A D (Note 2) 11.3 Pulsed Drain current V = 10V (Note 4) I 51 A GS DM Continuous Source current (Body diode) (Note 3) I 12 A S Pulsed Source current (Body diode) (Note 4) I 51 A SM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit 4.1 (Note 2) 32.5 Power dissipation 8.9 W (Note 3) P D Linear derating factor 71.4 mW/C 2.17 (Note 5) 17.4 (Note 2) 30.8 Thermal Resistance, Junction to Ambient (Note 3) 14.0 R C/W JA (Note 5) 57.6 Thermal Resistance, Junction to Lead (Note 6) 2.24 C/W R JL Operating and storage temperature range -55 to 150 T , T C J STG Notes: 2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions the device is measured when operating in a steady-state condition. 3. Same as note 2, except the device is measured at t 10 sec. 4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 s. The pulse current is limited by the maximum junction temperature. 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 6. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 8 May 2013 DMN3020LK3 Diodes Incorporated www.diodes.com Document Revision: 2