DMN3030LFG Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features I Low R ensures on state losses are minimized D DS(ON) V R Package (BR)DSS DS(ON) T = +25C A Small form factor thermally efficient package enables higher 18m V = 10V 8.6A GS POWERDI density end products 30V 3333-8 27m V = 4.5V 5.5A GS Occupies just 33% of the board area occupied by SO-8 enabling smaller end product Lead-Free Finish RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) This new generation MOSFET has been designed to minimize the on- Qualified to AEC-Q101 Standards for High Reliability state resistance (R ) and yet maintain superior switching DS(on) performance, making it ideal for high efficiency power management applications. Mechanical Data Case: POWERDI3333-8 Applications Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Backlighting Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminals: Finish Matte Tin annealed over Copper leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 e3 Weight: 0.072 grams (approximate) POWERDI3333-8 8 Pin 1 1 S S S G 7 2 6 3 D D 5 D 4 D Top View Top View Bottom View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN3030LFG-7 POWERDI3333-8 2000 / Tape & Reel DMN3030LFG-13 POWERDI3333-8 3000 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMN3030LFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 25 V GSS T = +25C Steady A 5.3 A I D State 4.2 T = +70C A Continuous Drain Current (Note 5) V = 10V GS T = +25C 6.8 A t<10s I A D 5.2 T = +70C A Steady T = +25C 8.6 A I A D State 6.8 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 11 A t<10s I A D 8.8 T = +70C A Pulsed Drain Current (10 s pulse, duty cycle = 1%) I 70 A DM Maximum Body Diode continuous Current I 3 A S Thermal Characteristics Characteristic Symbol Value Units 0.9 T = +25C A Total Power Dissipation (Note 5) P W D 0.5 T = +70C A Steady state 148 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 89 2.3 T = +25C A Total Power Dissipation (Note 6) P W D T = +70C 1.4 A Steady state 56 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 34 C/W Thermal Resistance, Junction to Case (Note 6) 6.9 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 100 nA V = 30V, V = 0V J DSS DS GS 1 A V = 25V, V = 0V GS DS Gate-Source Leakage I GSS 100 nA V = 20V, V = 0V GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.8 1.2 2.1 V V = V , I = 250 A GS(th) DS GS D 10 18 V = 10V, I = 10A GS D Static Drain-Source On-Resistance R m DS (ON) 16 27 V = 4.5V, I = 7.5A GS D Forward Transfer Admittance Y 6 S V = 5V, I = 10A fs DS D Diode Forward Voltage V 0.7 1.0 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 751 iss V = 10V, V = 0V, DS GS Output Capacitance C 121 pF oss f = 1.0MHz Reverse Transfer Capacitance C 110 rss Gate Resistance R 1.5 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge V = 4.5V Q 9 V = 4.5V, V = 15V, I =6A GS g GS DS D Total Gate Charge V = 10V Q 17.4 GS g nC V = 10V, V = 15V, GS DS Gate-Source Charge Q 2.2 gs I = 6A D Gate-Drain Charge Q 3 gd Turn-On Delay Time t 2.5 D(on) Turn-On Rise Time t 6.6 r V = 15V, V = 10V, DD GS ns Turn-Off Delay Time t 19.0 R = 6 , R = 1.8 , I = 6.7A D(off) G L D Turn-Off Fall Time t 6.3 f Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 March 2013 DMN3030LFG Diodes Incorporated www.diodes.com Document number: DS35499 Rev. 5 - 2 POWERDI is a registered trademark of Diodes Incorporated. NEW PRODUCT