Data Sheet 4V Drive Nch + Nch MOSFET TT8K11 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSST8 Features (8) (7) (6) (5) 1) Low on-resistance. 2) Low voltage drive(4V drive). 3) Small surface mount package(TSST8). (1) (2) (3) (4) Abbreviated symbol : K11 Application Switching Packaging specifications Inner circuit (8) (7) (6) (5) Package Taping Type Code TCR Basic ordering unit (pieces) 3000 TT8K11 2 2 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source 1 1 (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (1) (2) (3) (4) (7) Tr1 Drain (8) Tr1 Drain 1 ESD PROTECTION DIODE 2 BODY DIODE Absolute maximum ratings (Ta = 25 C) <It is the same ratings for the Tr1 and Tr2.> Parameter Symbol Limits Unit Drain-source voltage V 30 V DSS Gate-source voltage V 20 V GSS Continuous I 3A D Drain current *1 Pulsed I 12 A DP Continuous I 0.8 A Source current s (Body Diode) *1 Pulsed I 12 A sp *2 1.25 W / TOTAL Power dissipation P D 1.0 W / ELEMENT Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Thermal resistance Parameter Symbol Limits Unit * 100 C / W/ TOTAL Channel to Ambient Rth (ch-a) 125 C / W/ ELEMENT *Mounted on a ceramic board. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.08 - Rev.A 1/6Data Sheet TT8K11 Electrical characteristics (Ta = 25 C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV =20V, V =0V GSS GS DS Drain-source breakdown voltage V 30 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =30V, V =0V DSS DS GS Gate threshold voltage V 1.0 - 2.5 V V =10V, I =1A GS (th) DS D -51 71 I =3A, V =10V D GS Static drain-source on-state * R m DS (on) -67 94 I =3A, V =4.5V D GS resistance - 78 109 I =3A, V =4V D GS Forward transfer admittance l Y l* 2.0 - - S V =10V, I =3A fs DS D Input capacitance C - 140 - pF V =10V iss DS Output capacitance C - 55 - pF V =0V oss GS Reverse transfer capacitance C - 28 - pF f=1MHz rss Turn-on delay time t -5 - nsV 15V, I =1.5A d(on)* DD D Rise time t - 13 - ns V =4.5V * r GS Turn-off delay time t - 20 - ns R =10 * d(off) L Fall time t * -3 - nsR =10 f G Total gate charge Q * - 2.5 - nC V 15V, I =3A g DD D Gate-source charge Q * - 0.8 - nC V =5V gs GS Gate-drain charge Q - 0.6 - nC gd * *Pulsed Body diode characteristics (Source-Drain) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V - - 1.2 V I =3A, V =0V SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.08 - Rev.A