X-On Electronics has gained recognition as a prominent supplier of DMN1017UCP3-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN1017UCP3-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMN1017UCP3-7 Diodes Incorporated

Name: DMN1017UCP3-7
Brand: Diodes Incorporated
SKU: DMN1017UCP37_Diodes_Incorporated
Availability: InStock
Rating: 5 (11 reviews)

DMN1017UCP3-7 electronic component of Diodes Incorporated

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See Product Specifications

Part No.	DMN1017UCP3-7
Manufacturer:	Diodes Incorporated
Category:	MOSFETs
Description:	MOSFET MOSFETBVDSS: 8V-24V
Datasheet:	DMN1017UCP3-7 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.7712 ea
Line Total: USD 0.77

Availability - 2780
Ship by Tue. 11 Mar to Thu. 13 Mar

MOQ: 1 Multiples: 1
Pack Size: 1

DMN1017UCP3-7 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

2780

Ship by Tue. 11 Mar to Thu. 13 Mar

MOQ : 1
Multiples : 1

1 : USD 0.7712
10 : USD 0.4987
100 : USD 0.3289
500 : USD 0.2541
1000 : USD 0.2233
3000 : USD 0.1925

Specifications

Manufacturer

Diodes Incorporated Diodes Incorporated

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

7.5 A 7.5 A

Vds - Drain-Source Breakdown Voltage

12 V 12 V

Rds On - Drain-Source Resistance

14.1 mOhms 14.1 mOhms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

400 mV 400 mV

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

1.47 W 1.47 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

X3 - DSN1010 - 3 X3 - DSN1010 - 3

Packaging

Cut Tape Cut Tape

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

8 V 8 V

Qg - Gate Charge

16 nC 16 nC

Channel Mode

Enhancement Enhancement

Configuration

Single Single

Transistor Type

1 N - Channel 1 N - Channel

Brand

Diodes Incorporated Diodes Incorporated

Forward Transconductance - Min

6.6 S 6.6 S

Fall Time

7.5 ns 7.5 ns

Product Type

Mosfet Mosfet

Rise Time

6.3 ns 6.3 ns

Factory Pack Quantity :

3000 3000

Subcategory

Mosfets Mosfets

Typical Turn-Off Delay Time

17.9 ns 17.9 ns

Typical Turn-On Delay Time

3.7 ns 3.7 ns

Cnhts

8541290000 8541290000

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Notes:- Show Stocked Products With Similar Attributes.

DMN1017UCP3-7 Alternative Parts

We are delighted to provide the DMN1017UCP3-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN1017UCP3-7 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

DMN1017UCP3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. VGS = 3.3V, TA = +25C) Features TR-MOS Technology with the Lowest R : DS(ON) R = 14.1m to Minimize On-State Losses DS(ON) VDSS RDS(ON) Qg Qgd ID CSP with Footprint 1.0mm 1.0mm 12V 14.1m 10.5nC 4.1nC 7.5A Height = 0.29mm for Low Profile Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description For automotive applications requiring specific change This new generation MOSFET is engineered to minimize on-state control (i.e. parts qualified to AEC-Q100/101/200, PPAP losses and switch ultra-fast, making it ideal for high efficiency power capable, and manufactured in IATF 16949 certified transfer. Using Chip-Scale Package (CSP) to increase power density facilities), please contact us or your local Diodes by combining low thermal impedance with minimal R per DS(ON) representative. footprint area. DMN1017UCP3 Marking Information (Note 5) Marking 1 4B = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: I = 2021) M or M = Month (ex: 9 = September) Date Code Key Year 2017 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 Code E I J K L M N O P R S Aug Sep Oct Nov Dec Month Jan Feb Mar Apr May Jun Jul Code 1 2 3 4 5 6 7 8 9 O N D Marking 2 4B = Product Type Marking Code YW = Date Code Marking Y or Y = Year (ex: 1 = 2021) W or W = Week (ex: a = Week 27 z Represents Week 52 and 53) Date Code Key Year 2017 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 Code 7 1 2 3 4 5 6 7 8 9 0 Week 1-26 27-52 53 Code A-Z a-z z Note: 5. The marking code changed to Marking 2 from week 6, 2021. 2 of 8 DMN1017UCP3 February 2021 Diodes Incorporated www.diodes.com Document number: DS39521 Rev. 5 - 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
2780 Ship by Tue. 11 Mar to Thu. 13 Mar MOQ : 1 Multiples : 1	1 : USD 0.7712 10 : USD 0.4987 100 : USD 0.3289 500 : USD 0.2541 1000 : USD 0.2233 3000 : USD 0.1925

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