DMC4029SK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I D Low Input Capacitance Device BV R Max DSS DS(ON) T = +25C A Low On-Resistance 8.3A 24m V = 10V GS Fast Switching Speed Q1 40V 32m V = 4.5V 7.2A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 45m V = -10V -6.1A GS Q2 -40V Halogen and Antimony Free. Green Device (Note 3) 55m V = -4.5V -5.5A GS Mechanical Data Description Case: TO252-4 This new generation MOSFET is designed to minimize the on-state Case Material: Molded Plastic,Gree Molding Compound. resistance (R ), yet maintain superior switching performance, DS(ON) UL Flammability Classification Rating 94V-0 making it ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Applications Terminals: Finish Matte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.34 grams (Approximate) Backlighting D D D TO252-4 G1 G2 D S1 S2 S1 G2 G1 S2 Top View Bottom View Pin-Out Top View N-Channel MOSFET P-Channel MOSFET Ordering Information (Note 4) Part Number Case Packaging DMC4029SK4-13 TO252-4 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMC4029SK4 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Q1 Value Q2 Unit Drain-Source Voltage V 40 -40 V DSS Gate-Source Voltage V 20 20 V GSS Steady T = +25C 8.3 -6.1 A I A D State 6.7 -4.9 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 11.8 -8.6 A t<10s A I D 9.4 -6.9 T = +70C A Maximum Body Diode Forward Current (Note 6) I 2.5 -2.5 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 45 -35 A DM Avalanche Current, L = 0.1mH (Note 8) I 21 -20 A AS Avalanche Energy, L = 0.1mH (Note 8) E 22 20 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit T = +25C 1.5 A Total Power Dissipation (Note 5) W P D T = +70C 1.0 A Steady State 88 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 40 T = +25C 2.9 A Total Power Dissipation (Note 6) W P D T = +70C 1.6 A Steady State 42 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 20 C/W Thermal Resistance, Junction to Case (Note 7) R 4.5 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics Q1 N-Channel ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV 40 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 40V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V 1.0 3.0 V V = V , I = 250A GS(TH) DS GS D 15 24 V = 10V, I = 6A GS D Static Drain-Source On-Resistance R m DS(ON) 20 32 VGS = 4.5V, ID = 5A Diode Forward Voltage 0.7 1.0 V V V = 0V, I = 1.0A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance 1,060 C ISS V = 20V, V = 0V, DS GS Output Capacitance 84 pF C OSS f = 1.0MHz Reverse Transfer Capacitance 58 C RSS Gate Resistance R 1.6 V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge (V = 4.5V) Q 8.8 GS G Total Gate Charge (V = 10V) Q 19.1 GS G nC V = 20V, I = 8A DS D Gate-Source Charge Q 3.0 GS Gate-Drain Charge Q 2.5 GD Turn-On Delay Time 5.3 tD(ON) Turn-On Rise Time 7.1 t V = 25V, R = 2.5 R DD L ns Turn-Off Delay Time 15.1 V = 10V, R = 3 t GS G D(OFF) Turn-Off Fall Time 4.8 t F Body Diode Reverse Recovery Time 10.5 ns t I = 8A, di/dt = 100A/s RR F Body Diode Reverse Recovery Charge Q 4.15 nC I = 8A, di/dt = 100A/s RR F 2 of 10 DMC4029SK4 June 2016 Diodes Incorporated www.diodes.com Document number: DS37823 Rev. 3 - 2 ADVANCE INFORMATION