DMN3032LFDBQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switching Ensures More Reliable I Max D V R Max (BR)DSS DS(ON) T = +25C and Robust Application A Low On-Resistance Minimizes Power Losses 30m V = 10V 6.2A GS Low Gate Charge Minimizes Switching Losses 30V 42m V = 4.5V 5.2A GS Small Form Factor Low Profile Package Increased Power Density Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Description and Applications Case: U-DFN2020-6 This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a Case Material: Molded Plastic, Green Molding Compound. PPAP and ideal for use in: UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Body Control Electronics Terminals: Finish NiPdAu Annealed over Copper Leadframe. e4 Solderable per MIL-STD-202, Method 208 Power Management Functions Terminals Connections: See Diagram Below DC-DC Converters Weight: 0.0065 grams (Approximate) U-DFN2020-6 D1 D2 S2 G2 D2 D1 D1 G1 G2 D2 G1 S1 S1 S2 Pin1 Bottom View Internal Schematic Ordering Information (Notes 4 & 5) Part Number Case Packaging DMN3032LFDBQ-7 U-DFN2020-6 3,000/Tape & Reel DMN3032LFDBQ-13 U-DFN2020-6 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN3032LFDBQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 6.2 A Continuous Drain Current (Note 7) V = 10V I A GS D State 5.0 T = +75C A Maximum Continuous Body Diode Forward Current (Note 7) 2 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 25 A I DM Avalanche Current (Note 8) L = 0.1mH 12 A I AS Avalanche Energy (Note 8) L = 0.1mH 10 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) P 1.0 W D Steady state 127 Thermal Resistance, Junction to Ambient (Note 6) C/W R JA t<10s 75 Total Power Dissipation (Note 7) P 1.7 W D Steady state 72 Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 43 C/W Thermal Resistance, Junction to Case (Note 7) 9 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage 30 - - V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C - - 1.0 A J I V = 30V, V = 0V DSS DS GS Zero Gate Voltage Drain Current T = +150C (Note 10) - - 100 A J I V = 30V, V = 0V DSS DS GS Gate-Source Leakage - - 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V 1.0 1.5 2.0 V V = V , I = 250A GS(TH) DS GS D 25 30 V = 10V, I = 5.8A GS D Static Drain-Source On-Resistance - m R DS(ON) 30 42 V = 4.5V, I = 4.8A GS D Diode Forward Voltage V - 0.75 1.2 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 10) - - Input Capacitance C 500 pF iss V = 15V, V = 0V, DS GS - - Output Capacitance C pF oss 52 f = 1.0MHz - - Reverse Transfer Capacitance pF C 44 rss Gate Resistance - 2.3 - R V = 0V, V = 0V, f = 1MHz g DS GS - 5.0 - nC Total Gate Charge (V = 4.5V) Q GS g - 10.6 - nC Total Gate Charge (V = 10V) Q GS g V = 15V, I = 5.8A DS D Gate-Source Charge - 1.3 - nC Q gs - 1.8 - Gate-Drain Charge Q nC gd 2.2 Turn-On Delay Time t - - ns D(ON) 2.6 Turn-On Rise Time t - - ns R V = 15V, V = 10V, DD GS 9.7 Turn-Off Delay Time t - - ns R = 2.6, R = 3 D(OFF) L G 2.0 Turn-Off Fall Time t - - ns F Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMN3032LFDBQ October 2015 Diodes Incorporated www.diodes.com Document number: DS37981 Rev. 2 - 2