X-On Electronics has gained recognition as a prominent supplier of IXFB50N80Q2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFB50N80Q2 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXFB50N80Q2 IXYS

IXFB50N80Q2 electronic component of IXYS
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Part No.IXFB50N80Q2
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET 50 Amps 800V
Datasheet: IXFB50N80Q2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 41.6625 ea
Line Total: USD 41.66 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 41.6625
10 : USD 38.8625
25 : USD 36.216
100 : USD 32.748
500 : USD 29.94
1000 : USD 28.92

   
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Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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We are delighted to provide the IXFB50N80Q2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFB50N80Q2 and other electronic components in the MOSFETs category and beyond.

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TM HiPerFET V = 800V IXFB50N80Q2 DSS Power MOSFETs I = 50A D25 Q-Class R 160m DS(on) t 300ns rr N-Channel Enhancement Mode Avalanche Rated, Low Q , Low Intrinsic R g G High dV/dt, Low t rr PLUS264 Symbol Test Conditions Maximum Ratings V T = 25C to 150C 800 V DSS J V T = 25C to 150C, R = 1M 800 V DGR J GS V Continuous 30 V GSS G Tab D V Transient 40 V GSM S I T = 25C 50 A D25 C G = Gate D = Drain I T = 25C, Pulse Width Limited by T 200 A DM C JM S = Source Tab = Drain I T = 25C 50 A A C E T = 25C 5 J AS C Features dv/dt I I , V V , T 150C 20 V/ns S DM DD DSS J P T = 25C 1135 W Double Metal Process for Low Gate D C Resistance T -55 ... +150 C J Avalanche Rated T 150 C JM Low Package Inductance T -55 ... +150 C Fast Intrinsic Rectifier stg T 1.6mm (0.062 in.) from Case for 10s 300 C L Advantages T Plastic Body for 10s 260 C SOLD Weight 10 g Easy to Mount Space Savings High Power Density Applications Switch-Mode and Resonant-Mode Power Supplies >500kHz Switching DC-DC Converters DC Choppers Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. Pulse Generation J Laser Drivers BV V = 0V, I = 1mA 800 V DSS GS D V V = V , I = 8mA 3.0 5.5 V GS(th) DS GS D I V = 30V, V = 0V 200 nA GSS GS DS I V = V , V = 0V 50 A DSS DS DSS GS T = 125C 3 mA J R V = 10V, I = 0.5 I , Note 1 160 m DS(on) GS D D25 2010 IXYS CORPORATION, All Rights Reserved DS99005D(01/10) IXFB50N80Q2 Symbol Test Conditions Characteristic Values TM PLUS264 (IXFB) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 32 48 S fs DS D D25 C 7200 pF iss C V = 0V, V = 25V, f = 1MHz 1200 pF oss GS DS C 230 pF rss t 26 ns d(on) Resistive Switching Times t 25 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 60 ns d(off) R = 1 (External) G t 13 ns f Q 260 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 56 nC gs GS DS DSS D D25 Q 120 nC gd R 0.11 C/W thJC R 0.13 C/W thCK Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 50 A S GS I Repetitive Pulse Width Limited by T 200 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS I = 25A, V = 0V t 300 ns F GS rr Q -di/dt = 100A/s 1.1 C RM I V = 100V 8.0 A RM R Note: 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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