DMT3006LFG Green N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary Features and Benefits I Max Low R Ensures On-State Losses are Minimized D DS(ON) BV R Max DSS DS(ON) T = +25C Excellent Q R Product (FOM) C GD DS(ON) Advanced Technology for DC-DC Converters 6m V = 10V GS Small Form Factor Thermally Efficient Package Enables Higher 30V 55.6A Density End Products 10m V = 4.5V GS Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product 100% UIS (Avalanche) Rated Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Description and Applications Case: PowerDI 3333-8 This MOSFET is designed to minimize the on-state resistance Case Material: Molded Plastic,Gree Molding Compound. (R ), yet maintain superior switching performance, making it DS(ON) UL Flammability Classification Rating 94V-0 ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Backlighting Terminal Finish Matte Tin Annealed over Copper Leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.072 grams (Approximate) PowerDI3333-8 D Pin 1 S S 1 8 S G 7 2 G 6 3 D D 5 4 D S D Equivalent Circuit Top View Top View Bottom View Ordering Information (Note 4) Part Number Case Packaging DMT3006LFG-7 2,000/Tape & Reel PowerDI3333-8 DMT3006LFG-13 3,000/Tape & Reel PowerDI3333-8 Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMT3006LFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS T = +25C 55.6 C Continuous Drain Current (Note 6) V = 10V I A GS D 44.4 T = +70C C T = +25C 16.0 A A Continuous Drain Current (Note 5) V = 10V I GS D 12.8 T = +70C A Maximum Continuous Body Diode Forward Current (Note 5) I 2 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 80 A DM Avalanche Current, L=0.1mH I 25 A AS Avalanche Energy, L=0.1mH E 31 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) T = +25C P 27.8 W C D Thermal Resistance, Junction to Case (Note 6) R 4.5 JC C/W Thermal Resistance, Junction to Ambient (Note 5) R 54 JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 24V, V = 0V DSS DS GS V = +20V, V = 0V GS DS Gate-Source Leakage I 100 nA GSS V = -16V, V = 0V GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1.0 3.0 V V V = V , I = 250A GS(TH) DS GS D 4.8 6 V = 10V, I = 12A GS D Static Drain-Source On-Resistance R m DS(ON) 6.9 10 V = 4.5V, I = 12A GS D Diode Forward Voltage V 0.7 1.0 V V = 0V, I = 2A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 1,155 iss V = 15V, V = 0V, DS GS 456 Output Capacitance C pF oss f = 1.0MHz 72 Reverse Transfer Capacitance C rss Gate Resistance R 1.6 V = 0V, V = 0V, f = 1.0MHz G DS GS 8.4 Total Gate Charge (V = 4.5V) Q GS G 16.7 Total Gate Charge (V = 10V) Q GS G nC V = 15V, I = 9A DD D Gate-Source Charge 2.2 Q GS Gate-Drain Charge 3.5 Q GD Turn-On Delay Time 3.5 t D(ON) 5.5 Turn-On Rise Time t V = 15V, V = 10V, R DD GS ns 13.5 Turn-Off Delay Time t R = 3, I = 9A D(OFF) G D 4.6 Turn-Off Fall Time t F Body Diode Reverse Recovery Time t 19.3 ns RR I = 1.5A, di/dt = 100A/s F 8.6 Body Diode Reverse Recovery Charge Q nC RR Notes: 5. R is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. R is guaranteed by design JA JC while R is determined by the users board design. JA 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMT3006LFG September 2018 Diodes Incorporated www.diodes.com Document number: DS38252 Rev. 5 - 2