STD5N60DM2 STMicroelectronics

STD5N60DM2 Datasheet N-channel 600 V, 1.38 typ., 3.5 A MDmesh DM2 Power MOSFET in a DPAK package Features Order code V R max. I P DS DS(on) D TOT TAB STD5N60DM2 600 V 1.55 3.5 A 45 W 3 2 1 Fast-recovery body diode DPAK Extremely low gate charge and input capacitance Low on-resistance D(2, TAB) 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge (Q ) and time (t ) combined rr rr with low R , rendering it suitable for the most demanding high-efficiency DS(on) converters and ideal for bridge topologies and ZVS phase-shift converters. Product status link STD5N60DM2 Product summary Order code STD5N60DM2 Marking 5N60DM2 Package DPAK Packing Tape and reel DS11742 - Rev 3 - June 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD5N60DM2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 30 V GS Drain current (continuous) at T = 25 C 3.5 case I A D Drain current (continuous) at T = 100 C 2 case (1) I Drain current (pulsed) 14 A DM P Total dissipation at T = 25 C 45 W TOT case (2) dv/dt Peak diode recovery voltage slope 40 V/ns (3) dv/dt MOSFET dv/dt ruggedness 40 T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. I 3.5 A, di/dt=400 A/s V peak < V , V = 480 V. SD DS (BR)DSS DD 3. V 480 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 2.78 thj-case C/W (1) R Thermal resistance junction-pcb 50 thj-pcb 1. When mounted on a 1-inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not repetitive 1 A AR (2) E Single pulse avalanche energy 132 mJ AS 1. Pulse width limited by T . jmax 2. Starting T = 25 C, I = I , V = 50 V. j D AR DD DS11742 - Rev 3 page 2/18