X-On Electronics has gained recognition as a prominent supplier of STD5N60DM2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STD5N60DM2 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STD5N60DM2 STMicroelectronics

STD5N60DM2 electronic component of STMicroelectronics
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Part No.STD5N60DM2
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-channel 600 V, 1.38 Ohm typ., 3.5 A MDmesh DM2 Power MOSFET in a DPAK package
Datasheet: STD5N60DM2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.876 ea
Line Total: USD 0.88 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.3667

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.876
10 : USD 0.7207
100 : USD 0.498
500 : USD 0.4889
1000 : USD 0.4615
5000 : USD 0.4536

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 2.6149
10 : USD 0.9838
100 : USD 0.7363

   
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
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Maximum Operating Temperature
Pd - Power Dissipation
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Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STD5N60DM2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STD5N60DM2 and other electronic components in the MOSFETs category and beyond.

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STD5N60DM2 Datasheet N-channel 600 V, 1.38 typ., 3.5 A MDmesh DM2 Power MOSFET in a DPAK package Features Order code V R max. I P DS DS(on) D TOT TAB STD5N60DM2 600 V 1.55 3.5 A 45 W 3 2 1 Fast-recovery body diode DPAK Extremely low gate charge and input capacitance Low on-resistance D(2, TAB) 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge (Q ) and time (t ) combined rr rr with low R , rendering it suitable for the most demanding high-efficiency DS(on) converters and ideal for bridge topologies and ZVS phase-shift converters. Product status link STD5N60DM2 Product summary Order code STD5N60DM2 Marking 5N60DM2 Package DPAK Packing Tape and reel DS11742 - Rev 3 - June 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD5N60DM2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 30 V GS Drain current (continuous) at T = 25 C 3.5 case I A D Drain current (continuous) at T = 100 C 2 case (1) I Drain current (pulsed) 14 A DM P Total dissipation at T = 25 C 45 W TOT case (2) dv/dt Peak diode recovery voltage slope 40 V/ns (3) dv/dt MOSFET dv/dt ruggedness 40 T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. I 3.5 A, di/dt=400 A/s V peak < V , V = 480 V. SD DS (BR)DSS DD 3. V 480 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 2.78 thj-case C/W (1) R Thermal resistance junction-pcb 50 thj-pcb 1. When mounted on a 1-inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not repetitive 1 A AR (2) E Single pulse avalanche energy 132 mJ AS 1. Pulse width limited by T . jmax 2. Starting T = 25 C, I = I , V = 50 V. j D AR DD DS11742 - Rev 3 page 2/18

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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